R. Gilbert
11 Papers
R. Gilbert is an academic researcher. The author has contributed to research in topics: High-electron-mobility transistor & Transistor model. The author has an hindex of 1, co-authored 1 publications.
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Papers
Tic Tac Toe: Highly-Coupled, Load Insensitive Tx/Rx Array and a Quadrature Coil Without Lumped Capacitors
T. S. Ibrahim,F. E. Boada,R. Gilbert +2 more
- 01 Jan 2008
TL;DR: Tic-Tac-Toe coil does not posses lumped capacitors and can be easily tuned to 50 Ohms as discussed by the authors, which shows that onetune can fit all.
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Surmounting W-band Scalar Load-Pull Limitations Using the ASM-HEMT Model for Millimeter-Wave GaN HEMT Technology Large-Signal Assessment
Nicholas C. Miller,Michael Elliott,R. Gilbert,Erdem Arkun,D.J. Denninghoff +4 more
- 24 Jun 2022
TL;DR: In this paper , the authors presented an accurate ASM-HEMT model for millimeter-wave GaN HEMT technology validated with W-band scalar load-pull and power sweep measurements.
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W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
F. E. Arkun,D.J. Denninghoff,H. Tran,R. Tran,Nicholas C. Miller,Michael Elliott,R. Gilbert,I. Milosavljevic,G. Siddiqi,Micha N. Fireman,A. Corrion,David Fanning,Christi Peterson,A. Getter,A. Clapper +14 more
- 25 Jun 2023
TL;DR: Researchers develop W-band AlN/GaN HEMTs with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz, enabled by in-situ SiN passivation, scaled source-to-drain length, and regrown n+ GaN ohmic contacts.
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High-power Density W-band MMIC Amplifiers using Graded-channel GaN HEMTs
Jeong-Sun Moon,Bob Grabar,Joel C. Wong,Joe Tai,I. Ramos,Erdem Arkun,Chuong Ngoc Dao,David Fanning,Nicholas C. Miller,Michael Elliott,R. Gilbert,Nivedhita Venkatesan,Patrick Fay +12 more
- 11 Jun 2023
TL;DR: Researchers developed high-power density W-band MMIC amplifiers using graded-channel GaN HEMTs, achieving 50% peak power-added-efficiency at 94 GHz, 2.1 W output power, and 3.5 W/mm power density, with a peak gain of 22.5 dB at 92.5 GHz.
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90 nm GaN Technology for Millimeter-Wave Power Applications to W-Band and Beyond
P. Srivastava,David F. Brown,L. M. Pleasant,Nicholas C. Miller,Michael Elliott,R. Gilbert,John R. Jones,Wenhua Zhu,Hong M. Lu,D. Dugas,K. Chu +10 more
- 25 Jun 2023
TL;DR: The results from BAE Systems on-going efforts on 90 nm GaN Technology development are described, which include the development of a “Scaled GaN HEMT Technology” that offers the required gain and power added efficiency at V- and W-band applications while still providing sufficient output power density.
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