R. Germann
University of Stuttgart
24 Papers
279 Citations
R. Germann is an academic researcher from University of Stuttgart. The author has contributed to research in topics: Dry etching & Photoluminescence. The author has an hindex of 9, co-authored 24 publications.
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Papers
Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires
TL;DR: In this article, the lateral width dependence of the quantum efficiency of the excitonic recombination in etched InGaAs/InP wires (40 nm≤Lx≤5 μm) was investigated.
94
Energy dependence and depth distribution of dry etching‐induced damage in III/V semiconductor heterostructures
TL;DR: In this article, the authors investigated the effect of the angle of incidence of ion beam etching induced damage on the depth distribution, energy dependence, and the amount of damage caused by the ion beam.
66
Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires
TL;DR: Buried GaAs/AlGaAs quantum wires were prepared by Al0.2Ga0.8As overgrowth of deep etched wires defined by high-resolution electron beam lithography and dry etching as discussed by the authors.
33
Nanometer lithography for III–V semiconductor wires using chloromethylated poly‐α‐methylstyrene resist
TL;DR: In this paper, the photoluminescence efficiency of etched GaAs/AlGaAs wires was investigated for the fabrication of nanometer structures for optical studies, and they found a steep decrease with decreasing wire width, whereas for InGaAs/InP the decrease is much smaller.
31
Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content
B. E. Maile,Alfred Forchel,R. Germann,Detlev Grützmacher,H. P. Meier,Johann Peter Reithmaier +5 more
TL;DR: In this paper, the authors have fabricated semiconductor wires from materials with varying In content and measured the quantum efficiency as a function of lateral wire width and temperature, and found that the intensity decay observed for narrow wires can be explained by surface recombination at the wire sidewalls and the existence of an optically inactive layer.
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