In this paper, extremely high potential barrier height and gate turn-on voltage in an n+/p+/n+/p+/n GaAs field-effect transistor employing double camel-like gate structures are demonstrated. The gate potential barrier height of the double camel-like gate is substantially enhanced by the addition of another n+/p+ layer in the gate region, as compared with the conventional n+/p+/n single camel-like gate structure. The influence of gate structure layers on the depletion depth, potential barrier height, transconductance and gate voltage swing are addressed. Experimental results show that a relatively high gate turn-on voltage up to +4.9 V is realized because two reverse-biased junctions of the double camel-like gate structures absorb part of the positive gate voltage. In addition, an extremely broad gate voltage swing greater than 4.6 V with the transconductance above 100 mS mm?1 is observed. These results indicate that the studied device is suitable for linear and signal amplifiers and inverter circuit applications.

Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

A semiempirical model of GaN MESFET to evaluate admittance parameters, scattering parameters, maximum unilateral transducer power gain, and maximum stable gain is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model. Results have been verified using ATLAS 2D device simulator and are also compared with parasitic element-dependent model. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2446–2450, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22744

Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications

MOVPE has been used to grow 2D electron gas layers with concentration 8/spl times/10/sup 12/ cm/sup -2/ and mobility 10/sup 30/ cm/sup 2//Vsec in a AlGaN/GaN heterostructure Mesa isolated HFET devices have been fabricated using this material which show excellent isolation and highly encouraging characteristics suitable for power microwave applications

Fabrication and characterisation of Al/sub 0.23/Ga/sub 0.77/N/GaN HFETs on MOVPE layers

This paper investigates the theoretical potential of the wide bandgap (WBG) semiconductors silicon carbide and gallium nitride for microwave power MESFET devices. Their expected performances are compared to a baseline model of the current GaAs capability. In contrast to previous studies, the impedance matching and associated stability issues arising when deploying the devices in a microwave power amplifier are examined. For a given gate width and channel current, it is determined that WBG device models predict gain within 1 dB of that of GaAs, an input impedance approaching a factor of two higher and an increase in output power of a factor of 6. Based on current GaAs performance at 10 GHz, a conservative first-principles analysis suggests that WBG microwave integrated circuits will provide ∼80 W output power and modules will provide ∼400 W output power.

The potential performance of wide bandgap microwave power MESFETs

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The potential performance of wide bandgap microwave power MESFETs