R.E. Thomas
University of Wisconsin-Madison
7 Papers
63 Citations
R.E. Thomas is an academic researcher from University of Wisconsin-Madison. The author has contributed to research in topics: Amorphous solid & Amorphous metal. The author has an hindex of 4, co-authored 7 publications.
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Papers
Atomic interdiffusion in Au/amorphous NiNb/ semiconductor systems☆
TL;DR: In this article, backscattering measurements were performed to assess the stability of amorphous NiNb for contacts of high temperature electronics, and the results indicate that the use of Amorphous Nb as a contact or a diffusion barrier could extend the useful operation temperature range for GaP devices to above 550°C.
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Investigation of amorphous Ni0.60Nb0.40 diffusion barriers
TL;DR: In this paper, the Auger depth profiling was used to identify Ni0.60Nb0.40 amorphous alloys with polycrystalline overlayers of gold and copper and single-crystal substrates of silicon.
18
Crystallization of sputter deposited amorphous metal thin films
TL;DR: In this article, the authors studied the crystallization of DC sputter deposited amorphous W-Si alloys under three separate conditions: free standing films, amorphized films deposited on Si substrates, and films with one of four different overlayers.
18
Thermal stability of amorphous Ni-Nb on semiconductor substrates
TL;DR: The thermal stability of amorphous metal films is of prime importance in high temperature semiconductor device applications as discussed by the authors, and the feasibility of NiNb as a diffusion barrier between Au and a semiconductor substrate was found to depend on the substrate.
5
Interfacial Reactions Between Amorphous W-Si Thin Films And Polycrystalline Overlayers
TL;DR: In this article, the authors used Auger electron spectroscopy depth profiling coupled with cross-section TEM to study interfacial reactions between the amorphous layer and polycrystalline Al.
3