TiO2 sol–gel films doped with gold nanoparticles are used as both optical and conductometric sensors for the detection of CO and H2. Tests performed at 360 °C show for the first time CO- and H2-induced reversible variations in the optical absorption of thin TiO2/Au sol–gel films. The absorbance changes are strongly dependent on both the testing wavelength and the film microstructure. Together with the sensing dynamics observed through an electric interface, it is possible to obtain a better understanding of the mechanisms involved in the detection of both gases. The presence of H2 elicits almost ideal, step-like dynamic responses using conductometric detection.

/pdf/gold-nanoparticle-doped-tio2-semiconductor-thin-films-gas-q1xozao5sj.pdf

Gold Nanoparticle-Doped TiO2 Semiconductor Thin Films: Gas Sensing Properties†

Metal-semiconductor interaction: Effect of H2 chemisorption on the IR transparency of the Cu/ZnO system

The high-resolution electron-energy-loss spectrum of tio2(110)

Implantation of 100‐eV hydrogen ions on the (0001) face of ZnO produces extremely strong electron accumulation layers on the surface. Calibrated argon‐ion sputtering measurements indicate that the implanted ions (consisting mostly of protons) penetrate to a depth of 10–20 A beneath the surface. They act as fully ionized donors giving rise to a free electron layer of comparable depth and of surface electron densities up to 2×1014 cm−2. The narrow width, combined with detailed transport measurements, show that the implanted accumulation layers closely resemble ordinary accumulation layers on ZnO surfaces obtained, for example, by exposing the surface to atomic hydrogen. Thus the implanted layers, just as the ordinary accumulation layers, constitute a quantized, two‐dimensional electron gas system. The important advantage of the implanted over the ordinary accumulation layers, however, is that they are completely inert to oxygen or even to room air. Annealing experiments provide estimates for the activation...

Quantized electron accumulation layers on ZnO surfaces produced by low‐energy hydrogen‐ion implantation

Infrared evidence of metal-semiconductor interaction in a Ru/ZnO system

Angle-resolved electron-energy-loss spectroscopy from solid-state surfaces is studied both theoretically and experimentally, with particular emphasis on the ZnO surface. The plasmonlike loss peak is found to shift as a function of detector angle. This is due to the highly dispersive nature of the plasmon mode. There is also evidence for a phononlike model which remains unshifted as a function of detector angle. The role of both collective and single-particle excitations are considered, and the theory is found to be in good agreement with the experiment.

Angle-resolved electron-energy-loss spectroscopy of two-dimensional plasmons

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Angle-resolved electron-energy-loss spectroscopy of two-dimensional plasmons