R. Dwivedi
Prairie View A&M University
16 Papers
171 Citations
R. Dwivedi is an academic researcher from Prairie View A&M University. The author has contributed to research in topics: Breakdown voltage & Diode. The author has an hindex of 9, co-authored 16 publications.
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Papers
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
B. Luo,Jerry W. Johnson,Fan Ren,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,R. Dwivedi,T. N. Fogarty,Richard Wilkins,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow,Albert G. Baca +13 more
TL;DR: In this paper, a range of gate lengths (0.8-1.2μm) and widths (100-200 μm) were exposed to 40 MeV protons at fluences of 5×109 or 5×1010 cm−2.
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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
B. Luo,Jerry W. Johnson,Fan Ren,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,R. Dwivedi,T. N. Fogarty,Richard Wilkins,Amir M. Dabiran,A. M. Wowchack,C. J. Polley,Peter Chow,Albert G. Baca +13 more
TL;DR: In this article, the authors showed that postirradiation annealing at 300°C was able to restore ∼ 70% of the initial gm and IDS values in HEMTs receiving proton doses of 5 × 1010 cm-2.
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High energy proton irradiation effects on SiC Schottky rectifiers
S. Nigam,Jihyun Kim,Fan Ren,Gilyong Chung,M. F. MacMillan,R. Dwivedi,T. N. Fogarty,Richard Wilkins,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,John R. Williams +11 more
TL;DR: In this article, Schottky rectifiers with dielectric overlap edge termination were exposed to 40 MeV protons at fluences from 5×107-5×109 cm−2.
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Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors
B. Luo,Jihyun Kim,Fan Ren,J. K. Gillespie,Robert C. Fitch,James S. Sewell,R. Dettmer,Glen D. Via,Antonio Crespo,T. Jenkins,Brent P. Gila,A. H. Onstine,K. K. Allums,C. R. Abernathy,S. J. Pearton,R. Dwivedi,T. N. Fogarty,Richard Wilkins +17 more
TL;DR: Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm−2).
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Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes
Rohit Khanna,K. K. Allums,C. R. Abernathy,Stephen J. Pearton,Jihyun Kim,Fan Ren,R. Dwivedi,T. N. Fogarty,Richard Wilkins +8 more
TL;DR: In this article, GaN multi-quantum-well light-emitting diodes (LEDs) in the form of unpackaged die with emission wavelengths from 410 to 525nm were irradiated with 40MeV protons to doses of 5×109−5×1010cm−2.
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