Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 /spl Omega//spl middot/cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.

/pdf/fully-depleted-back-illuminated-charge-coupled-devices-5gdl180uro.pdf

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the other, are critical for smart grid and renewable energy systems. The power semiconductor device, as the cornerstone technology in a power electronics system, plays a pivotal role in determining the system efficiency, size, and cost. Starting from the invention and commercialization of silicon bipolar junction transistor 60 years ago, a whole array of silicon power semiconductor devices have been developed and commercialized. These devices enable power electronics systems to reach ultrahigh efficiency and high-power capacity needed for various smart grid and renewable energy system applications such as photovoltaic (PV), wind, energy storage, electric vehicle (EV), flexible ac transmission system (FACTS), and high voltage dc (HVDC) transmission. In the last two decades, newer generations of power semiconductor devices based on wide bandgap (WBG) materials, such as SiC and GaN, were developed and commercialized further pushing the boundary of power semiconductor devices to higher voltages, higher frequencies, and higher temperatures. This paper reviews some of the major power semiconductor devices technologies and their potential impacts and roadmaps.

Power Semiconductor Devices for Smart Grid and Renewable Energy Systems

This chapter intends to provide a comprehensive and comparative discussion of various important power device technologies which are critical for industrial, smart grid and renewable energy applications. A power semiconductor switch is a three‐terminal device that can either conduct a current when it is commanded ON, or block a voltage when it is commanded OFF through the control terminal. Modern power converters require the power device to switch at high frequencies. A modern power semiconductor device operates between ON and OFF states at a high switching frequency. One way to compare state‐of‐the‐art power devices, especially their commercial readiness, is to compare their absolute voltage and current ratings. The chapter reviews several important innovations in Si power devices. The most exciting development in power semiconductor devices in the last decade is the commercialization of a number of wide bandgap power devices.

Power semiconductor devices for smart grid and renewable energy systems

We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly ideal Schottky contact exhibits a forward current density over kA/cm2, current swing over 1013, and differential specific ON-resistance of 1.2 $\text{m}\Omega \cdot $ cm2. The breakdown voltage is boosted from 335 V for unterminated-SBD to 995 V after termination, whereas a high ON/OFF current ratio ( ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ at −600 V) of ~108 is realized in the NT-SBD. It has been verified that the NT technique can favorably modify GaN surface condition, leading to suppressed leakage current at the junction edge and enhanced breakdown voltage.

High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

The most commonly used high-voltage blocking and termination structures-floating field limiting rings (FLR), lateral charge control HVIC devices, and junction termination extension (JTE) structures-are very sensitive to positive silicon and silicon dioxide interface charges. These high-voltage termination structures specifically designed for 1000-V blocking capability lose 25 to 50% of their voltage-blocking capability under 5*10/sup 11/ cm/sup -2/ net interface state density. In contrast, optimized multiple-zone JTE (MZ-JTE), and offset multiple field plated and field-limiting ring (OFP-FLR) structures will lose only 5% of their respective voltage blocking capabilities under the same surface-charge condition. These improved high-voltage blocking structures do not require additional passivation and process complexities. >

Optimization and surface charge sensitivity of high-voltage blocking structures with shallow junctions

In this report the theory and the computational methods used to perform numerical field calculations on reverse biased two-dimensional (or three-dimensional with circular symmetry) structures are fully described and completely justified. Finite difference methods are used to approximate Poisson's equation and, together with a depletion region logic, solutions to semiconductor field problems are obtained without the need to solve the complete set of device equations. Two unique aspects of the methods are the depletion logic and the approach taken to handle dielectric interfaces.

Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices

The use of one or more floating field limiting rings reduces the adverse effect of junction curvature on the breakdown voltage in planar devices. Although this has been known for some time, there has not been a way of accurately predicting the amount of improvement that can be achieved using field rings. In this paper, a computer algorithm is presented which makes it possible to perform field calculations on devices with floating field rings. In addition, a normalized curve is presented which shows the relative improvement that a single optimally placed field ring has on the breakdown voltage for any planar device. The basis of the construction of this curve is the use of a normalized radius of curvature which is a precise measure of the effect of curvature for any device. The theoretical predictions are compared with experiments for over 640 devices encompassing 16 different field ring locations. Good agreement is achieved between theory and experiment.

Theory and breakdown voltage for planar devices with a single field limiting ring

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

R.C. Rustay

Author Tools

Chat about Author

Papers

Theoretical basis for field calculations on multi-dimensional reverse biased semiconductor devices

Theory and breakdown voltage for planar devices with a single field limiting ring