R Buchta
4 Papers
56 Citations
R Buchta is an academic researcher. The author has contributed to research in topics: Sputtering & Aluminium. The author has an hindex of 3, co-authored 4 publications.
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Papers
Limitation of Ti/TiN diffusion barrier layers in silicon technology
TL;DR: In this article, the authors examined the usefulness of low resistive contacts and diffusion barriers between doped silicon and aluminium and concluded that RBS, commonly used in the study of diffusion barrier properties, gives optimistic information on the upper limit of the metallurgical stability of the barrier layers.
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RIE of SiO2 in doped and undoped fluorocarbon plasmas
TL;DR: In this article, it is shown that the ion-assisted chemical reaction between oxygen or nitrogen and the polymerizing species, forming volatile products, together with the physical sputtering, makes these areas accessible to fluorine-containing species responsible for the chemical etching of SiO 2.
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Titanium Disilicide in MOS Technology
TL;DR: In this paper, the results of applying titanium silicide as low resistive (1.2 Ω/) gate and interconnect material, in short channel (1 μm) MOS technology are presented.
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Enhanced failure mechanism in a titanium based contact to silicon
TL;DR: In this paper, an aluminium-silicon alloy has been adopted as the top metal layer over a Ti/TiN contact to silicon, and the integrity of shallow contacts, after annealing at various temperatures, is investigated and compared with that obtained with pure aluminium over the nitride barrier.
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