R. Birkhahn
5 Papers
12 Citations
R. Birkhahn is an academic researcher. The author has contributed to research in topics: Inverter & Power semiconductor device. The author has an hindex of 3, co-authored 5 publications.
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Papers
Performance and robustness of first generation 600-V GaN-on-Si power transistors
Yifeng Wu,John Gritters,Likun Shen,R. P. Smith,J. McKay,Ronald Barr,R. Birkhahn +6 more
- 01 Oct 2013
TL;DR: The first 600-V GaN-on-Si switching transistors have passed qualification based on the Jedec standards and entered commercial market as mentioned in this paper, and they exhibit properties superior to matured Si counterparts including lower on-resistance, much reduced input/output charges, and much higher switching speed.
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Invited) 650 Volt GaN Commercialization Reaches Automotive Standards
Primit Parikh,Kurt Smith,Ron Barr,Ken Shono,J. McKay,Likun Shen,Rakesh K. Lal,Srabanti Chowdhury,S. Yea,Richard Peter Smith,Tsutomu Hosoda,John Gritters,L. McCarthy,R. Birkhahn,Kenji Imanishi,Brian L. Swenson,Marcia Moore,Yoshiyuki Kotani,Tsutsumo Ogino,N. Bushnell,J. Guerrero,H. Clement,Yoshimori Asai,Yifeng Wu +23 more
- 17 Aug 2017
TL;DR: In this article, the authors review the first ever Automotive (AEC Q101) Qualification for Gallium Nitride (GaN) and discuss in detail results for highly stressed robustness tests, FIT rates & lifetime testing.
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GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges
P. Parikh,Yifeng Wu,Likun Shen,Ronald Barr,Srabanti Chowdhury,John Gritters,S. Yea,Pete Smith,L. McCarthy,R. Birkhahn,Marcia Moore,J. McKay,H. Clement,Umesh Mishra,Rakesh K. Lal,Philip Zuk,Tsutomu Hosoda,Ken Shono,Kenji Imanishi,Yoshimori Asai +19 more
- 01 Dec 2018
TL;DR: In this article, the authors highlight key successes in efficient and compact converters/inverters ranging from high performance gaming/crypto-mining power supplies, titanium class server power, servo drives, PV inverters, and automotive OBCs, dc-dc converters, pole charges.
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650 Volt GaN: Highest Quality-Highest Performance Drives Market Ramp
P. Parikh,Y-F. Wu,L. Shen,John Gritters,T. Hosoda,Ronald Barr,Kurt Smith,K. Shono,J. McKay,H. Clement,Srabanti Chowdhury,S. Yea,P. Smith,L. McCarthy,R. Birkhahn,Philip Zuk,Y. Asai +16 more
- 01 Oct 2018
TL;DR: The design, performance and manufacturability of high voltage GaN, establishment of the highest level of quality and reliability standards and key features that led to market ramp are reviewed.
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