The spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic `ODCs' (oxygen-deficiency centers), and their Ge-related analogs play a key role in the fiber-optic Bragg grating writing processes. The controversy surrounding the structural models for the Si- and Ge-related ODCs is discussed and the similarity between the bulk and surface point defects in silica is emphasized. The possible interconversion mechanisms between 2-fold-coordinated Si, neutral oxygen vacancies and E′-centers are discussed. The effects of glassy disorder have a profound effect on defect properties and interconversion processes in silica.

Optically active oxygen-deficiency-related centers in amorphous silicon dioxide

This review is concerned with the properties and structure of silica glass. The following topics are treated: Types of silica glasses; The vitreous state of silica glasses: thermodynamical approach, atomistic approach; Optical properties; absorption and fluorescence, refractive index and homogeneity; Mechanical and thermal properties: specific volume, volume relaxation, volume and pressure, elastic and internal friction behaviour, heat capacity and heat conduction, strength, crystallization.

/pdf/properties-and-structure-of-vitreous-silica-i-3zzb68vkny.pdf

Properties and structure of vitreous silica. I

This paper reviews the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation. Device and circuit effects are also discussed briefly.

/pdf/total-ionizing-dose-effects-in-mos-oxides-and-devices-4ndco1w6sd.pdf

Total ionizing dose effects in MOS oxides and devices

We report electron spin resonance (ESR) measurements of E′‐center (a ‘‘trivalent silicon’’ center in SiO2) density as well as capacitance versus voltage (C‐V) measurements on γ‐irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of earlier ESR measurements of the dependence of radiation‐induced Pb ‐center (a ‘‘trivalent silicon’’ center at the Si/SiO2 interface) occupation as a function of the Fermi level at the Si/SiO2 interface. These measurements indicate that the Pb centers are neutral when the Fermi level is at mid‐gap. Since the Pb centers are largely responsible for the radiation‐induced interface states, one may take ΔVmg Cox/e (where ΔVmg is the ‘‘mid‐gap’’ C‐V shift, Cox is the oxide capacitance, and e is the electronic charge) as the density of holes trapped in the oxide. We find that radiation‐induced E′ density equals ΔVmg Cox/e in oxides grown in both stream and dry oxygen. Etch‐back experiments demonstrate that the E′ centers are concentrated very near the Si/SiO2 interface (as are the trapped holes). Furthermore, we have subjected irradiated oxide structures to a sequence of isochronal anneals and find that the E′ density and ΔVmg annealing characteristics are virtually identical. We conclude that the E′ centers are largely responsible for the deep hole traps in thermal SiO2 on silicon. This observation coupled with observations regarding the Pb center indicates that two intrinsic centers, both involving silicon atoms lacking one bond to an oxygen atom, are largely responsible for the two electrically significant aspects of radiation damage in MOS devices: charge buildup in the oxide and interface‐state creation at the Si/SiO2 interface.

Hole traps and trivalent silicon centers in metal/oxide/silicon devices

The present paper reviews a quarter of a century of electron spin resonance (ESR) studies in glasses. Specific subtopics addressed include transition-group ions, radiation-induced defect centers, ferromagnetic precipitates, and photo-induced centers. For brevity, most of the examples in the first three categories are confirmed to the familiar oxide glass systems and only the most concrete conclusions are elaborated. The section treating radiation-induced defects is further abridged in light of several reviews of this topic in the current literature. Even within these limitations of scope, a great diversity of material is summarized. Most of the studies cited provide information concerning the atomic scale structure of the host glasses and several have immediate impact on practical problems ranging from glass technology to geochemistry.

Electron spin resonance in glasses

Various kinds of silica glass and natural and synthetic crystals have been irradiated with fast neutrons at temperatures of ∼250°C and above 300°C In the glasses, asymmetric paramagnetic resonance lines resulting from the irradiation have been observed with apparent g values of 20013±00006 and 20090±00007, and half‐widths of ≈17 gauss and ≈40 gauss, respectively Two groups of lines were found in the natural crystals and have been associated with the two lines in the glasses, the two lines in the glasses being the envelope of the lines in the crystals when they are summed over random orientations with respect to the magnetic field On the basis of g values, absence of common impurity and of hyperfine splitting, and the thermal stability of the lines, it is concluded that the observed resonances in the silica glasses and crystals have their origin in defects in the basic SiO4 tetrahedra generated by fast neutrons and primary and secondary knockons From preliminary optical bleaching data in neutron i

Paramagnetic Resonance of Lattice Defects in Irradiated Quartz

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Paramagnetic Resonance of Lattice Defects in Irradiated Quartz