The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

Electronic properties of two-dimensional systems

Evidence for Anderson localisation in Landau level tails from the analysis of two-dimensional Shubnikov—de Haas conductivity minima

III–V compound semiconductors

A review is made of the quantum effects which are observed in the transport coefficients of semiconductors. Quantization of the free carriers in semiconductors is produced whenever an external pote...

Quantum transport in semiconductors

The authors present evidence showing that two-dimensional conduction giving rise to Shubnikov-de Haas oscillations can occur, not only in the inversion layer of Si MOSFETs, but also in the diffused contact regions under the gate. This gives rise to additional splittings and distortion of the Shubnikov-de Haas samples when a large negative substrate bias is applied.

https://iopscience.iop.org/article/10.1088/0022-3719/13/23/010/pdf

Two-dimensional conductivity in the contact regions of silicon MOSFETs

Peaked structure appearing in the field effect mobility of silicon mos devices at temperatures above 20 K

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

R. A. Stradling

Author Tools

Chat about Author

Papers

Peaked structure appearing in the field effect mobility of silicon mos devices at temperatures above 20 K