This paper reviews recent advancements in all-optical memory components, particularly focusing on various types of all-optical flip-flops (FFs) based on photonic crystal (PC) structures proposed in recent years. PCs, with their unique optical properties and engineered structures, including photonic bandgap control, enhanced light–matter interaction, and compact size, make them especially suitable for optical FFs. The study explores three key materials, silicon, chalcogenide glass, and gallium arsenide, known for their high refractive index contrast, compact size, hybrid integration capability, and easy fabrication processes. Furthermore, these materials exhibit excellent compatibility with different technologies like CMOS and fiber optics, enhancing their versatility in various applications. The structures proposed in the research leverage mechanisms such as waveguides, ring resonators, scattering rods, coupling rods, edge rods, switches, resonant cavities, and multi-mode interference. The paper delves into crucial properties and parameters of all-optical FFs, including response time, contrast ratio, and operating wavelength. Optical FFs possess significant advantages, such as high speed, low power consumption, and potential for integration, making them a promising technology for advancing optical computing and optical memory systems.

Photonic Crystal Flip-Flops: Recent Developments in All Optical Memory Components

An integrated optical isolator is a crucial part of photonic integrated circuits (PICs). Existing optical isolators, predominantly based on the silicon-on-insulator (SOI) platform, face challenges in integrating with active devices. We propose a broadband, compact TM mode Mach–Zehnder optical isolator based on InP-on-insulator platforms. We designed two distinct magneto-optical waveguide structures, employing different methods for bonding Ce:YIG and InP, namely O2 plasma surface activation direct wafer bonding and DVS-benzocyclobutene (BCB) adhesive bonding. Detailed calculations and optimizations were conducted to enhance their non-reciprocal phase shift (NRPS). At a wavelength of 1550 nm, the direct-bonded waveguide structure achieved a 30 dB bandwidth of 72 nm with a length difference of 0.256 µm. The effects of waveguide arm length, fabrication accuracy, and dimensional errors on the device performance are discussed. Additionally, manufacturing tolerances for three types of lithographic processes were calculated, serving as references for practical manufacturing purposes.

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms

Integrated photonics has emerged as one of the most promising platforms for quantum applications. The performances of quantum photonic integrated circuits (QPIC) necessitate a demanding optimization to achieve enhanced properties and tailored characteristics with more stringent requirements with respect to their classical counterparts. In this study, we report on the simulation, fabrication, and characterization of a series of fundamental components for photons manipulation in QPIC based on silicon nitride. These include crossing waveguides, multimode-interferometer-based integrated beam splitters (MMIs), asymmetric integrated Mach-Zehnder interferometers (MZIs) based on MMIs, and micro-ring resonators. Our investigation revolves primarily around the visible to near-infrared spectral region, as these integrated structures are meticulously designed and tailored for optimal operation within this wavelength range. By advancing the development of these elementary building blocks, we aim to pave the way for significant improvements in QPIC in a spectral region only little explored so far.

SiN integrated photonic components in the visible to near-infrared spectral region.

Abstract Amorphous alumina is highly transparent across the visible spectrum, making it a promising candidate for low-loss waveguiding at short wavelengths. However, previous alumina waveguide demonstrations in the visible region have focused on low- to moderate-confinement waveguides, where the diffuse mode reduces the design flexibility and integration density of photonic integrated circuits. Here, we have developed a high-quality etch mask and a highly selective BCl 3 plasma etch, allowing etching of amorphous alumina waveguides up to 800 nm thick. Using this process, we have fabricated waveguides using an alumina film grown by atomic layer deposition (ALD) which are the lowest-loss high-confinement waveguides for blue light to date: we achieve single-mode propagation losses of 0.8 dB/cm at a propagation wavelength of 450 nm. 

High-confinement alumina waveguides with sub-dB/cm propagation losses at 450 nm

Silicon nitride (Si3N4) photonic integrated circuits (PICs) are of great interest due to their extremely low propagation loss and higher integration capabilities. The number of applications based on the silicon nitride integrated photonics platform continues to grow, including the Internet of Things (IoT), artificial intelligence (AI), light detection and ranging (LiDAR), hybrid neuromorphic and quantum computing. It's potential for CMOS compatibility, as well as advances in heterogeneous integration with silicon‐on‐insulator, indium phosphate, and lithium niobate on insulator platforms, are leading to an advanced hybrid large‐scale PICs. Here, they review key trends in Si3N4 photonic integrated circuit technology and fill an information gap in the field of state‐of‐the‐art devices operating from the visible to the mid‐infrared spectrum. A comprehensive overview of its microfabrication process details (deposition, lithography, etching, etc.) is introduced. Finally, the limitations and challenges of silicon nitride photonics performance are pointed out in an ultra‐wideband, providing routes and prospects for its future scaling and optimization.

Silicon Nitride Integrated Photonics from Visible to Mid‐Infrared Spectra

Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220x550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.

Low-loss silicon nitride photonic ICs for single-photon applications

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Low-loss silicon nitride photonic ICs for single-photon applications