Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability. This article reviews recent progress in the doped BaSnO3 system, discussing the wide range of physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomen...

Transparent Perovskite Barium Stannate with High Electron Mobility and Thermal Stability

Fully photon modulated heterostructure for neuromorphic computing

A review of recent developments in tin dioxide composites for gas sensing application

Metal-oxide thin films are used extensively in electronic and energy applications. Solution processing offers a potentially scalable and inexpensive deposition method to expand the applications of metal-oxide films and to complement vacuum-deposition techniques. Among precursors for solution deposition, metal nitrates stand out for their ability to form high-quality metal-oxide thin films. This review focuses on unique aspects of metal-nitrate chemistry that have been exploited to advance the development of solution-processed thin films. We discuss the solid-state bulk, solution, and thin-film chemical reactions involving metal nitrates and illustrate how the resulting metal-oxide thin-film properties depend on the entire reaction pathway. To conclude, we offer perspective as to how understanding the chemistry of film formation from metal-nitrate precursors is useful for addressing the primary drivers for industrial manufacturing of solution-processed metal-oxide thin films.

Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications

The present study demonstrates the hydrothermal synthesis of SnO2 quantum dots (QDs) doped with different concentrations (2, 4 wt %) of magnesium (Mg) and a fixed amount of chitosan (CS). The obtained samples were investigated through a number of characterizations for optical analysis, elemental composition, crystal structure, functional group presence, interlayer spacing, and surface morphology. The XRD spectrum revealed the tetragonal structure of SnO2 with no significant variations occurring upon the addition of CS and Mg. The crystallite size of QDs was reduced by incorporation of dopants. The optical absorption spectra revealed a red shift, assigned to the reduction of the band gap energy upon doping. TEM analysis proved that the few nanorod-like structures of CS overlapped with SnO2 QDs, and agglomeration was observed upon Mg doping. The incorporation of dopants little enhanced the d-spacing of SnO2 QDs. Moreover, the synthesized nanocatalyst was utilized to calculate the degradation percentage of methylene blue (MB) dye. Afterward, a comparative analysis of catalytic activity, photocatalytic activity, and sonophotocatalytic activity was carried out. Notably, 4% Mg/CS-doped QDs showed maximum sonophotocatalytic degradation of MB in basic medium compared to other activities. Lastly, the prepared nanocatalyst was found to be efficient for dye degradation in any environment and inexpensive.

Comparative Study of Sonophotocatalytic, Photocatalytic, and Catalytic Activities of Magnesium and Chitosan-Doped Tin Oxide Quantum Dots

A combustion solution method was developed to fabricate amorphous ZnAlSnO (a-ZATO) for thin-film transistors (TFTs). The properties of a-ZATO films and behaviors of a-ZATO TFTs were studied in detail. An appropriate Al content in the matrix could suppress the formation of oxygen vacancies efficiently and achieve densely amorphous films. The a-ZATO TFTs exhibited acceptable performances, with an on/off current ratio of ∼106, field-effect mobility of 2.33 cm2·V−1·S−1, threshold voltage of 2.39 V, and subthreshold swing of 0.52 V/decade at an optimal Al content (0.5). The relation between on- and off-resistance of the ZATO TFT was also within the range expected for fast switching devices. More importantly, the introduced Al with an appropriate content had the ability to evidently enhance the device long-term stability under working bias stress and storage durations. The obtained indium- and gallium-free a-ZATO TFTs are very promising for the next-generation displays.

Amorphous ZnAlSnO thin-film transistors by a combustion solution process for future displays

Amorphous zinc-indium-tin oxide (a-ZITO) thin-film transistors (TFTs) have been prepared using a low-temperature combustion process, with an emphasis on complete miscibility of In and Sn contents. The a-ZITO TFTs were comparatively studied in detail, especially for the working stability. The a-ZITO TFTs all exhibited acceptable and excellent behaviors from Sn-free TFTs to In-free TFTs. The obtained a-ZTO TFTs presented a field-effect mobility of 1.20 cm2 V−1 s−1, an on/off current ratio of 4.89 × 106, and a long-term stability under positive bias stress, which are comparable with those of the a-ZIO TFTs. The In-free a-ZTO TFTs are very potential for electrical applications with a low cost.

Combustion-process derived comparable performances of Zn-(In:Sn)-O thin-film transistors with a complete miscibility

The stability of thin-film transistors (TFTs) with amorphous InAlZnO (a-IAZO) thin films as the channel layers was investigated. The devices annealed at 300 °C had a large threshold voltage (Vth) shift under gate voltage sweep, while the devices annealed at 400 °C were quite stable. The S value of the transfer characteristic curve was effectively reduced after 400 °C annealing as compared to 300 °C annealing. X-ray photo-electron spectroscopy results also showed oxygen deficiencies decreased as the annealing temperature increased. The improvement of TFTs stability might attribute to the reduction of trap states related to oxygen deficiencies. The 400 °C annealed a-IAZO TFTs exhibited small positive shift of threshold voltages under bias stress conditions, suggesting the a-IAZO might be a promising candidate for application in TFTs.

Stability of amorphous InAlZnO thin-film transistors

Texture surfaces and etching mechanism of ZnO:Al films by a neutral agent for solar cells

Texture-etched broad surface features of double-layered ZnO:Al transparent conductive films for high haze values

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