Qiao Wang
South China Normal University
2 Papers
Qiao Wang is an academic researcher from South China Normal University. The author has contributed to research in topics: Reactive-ion etching & Undercut. The author has co-authored 2 publications.
Chat about Author
Papers
Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching
Bo Wang,Bo Wang,Shi-Chen Su,Miao He,Hong Chen,Wen-Bo Wu,Wei-Wei Zhang,Qiao Wang,Yulong Chen,You Gao,Li Zhang,Ke-Bao Zhu,Yan Lei +12 more
TL;DR: In this paper, the authors use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE).
1
Effect of InxGa1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
Wei-Ning Qian,Wei-Ning Qian,Shi-Chen Su,Hong Chen,Ziguang Ma,Ke-Bao Zhu,Miao He,Ping-Yuan Lu,Geng Wang,Taiping Lu,Chunhua Du,Qiao Wang,Wen-Bo Wu,Wei-Wei Zhang +13 more
TL;DR: In this paper, the effect of an InxGa1-xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template was investigated, and the results showed that the InGa1xN buffer layer is effective to improve the surface morphology, crystalline quality, indium incorporations, and relaxation degrees of the epilayers with different buffer layers.