19 Papers
20 Citations
Qian Wang is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Monolayer & Thermoelectric effect. The author has an hindex of 8, co-authored 19 publications. Previous affiliations of Qian Wang include University of California, Santa Barbara.
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Papers
Phase-selective synthesis of 1T' MoS 2 monolayers and heterophase bilayers.
Lina Liu,Juanxia Wu,Liyuan Wu,Meng Ye,Xiaozhi Liu,Qian Wang,Siyao Hou,Pengfei Lu,Lifei Sun,Jingying Zheng,Lei Xing,Lin Gu,Xiangwei Jiang,Liming Xie,Liming Xie,Liying Jiao +15 more
TL;DR: This phase-controlled bottom-up synthesis of 1T′ MoS2 monolayers with high phase purity allows us to characterize their intrinsic optical and electrical properties, revealing a characteristic in-plane anisotropy.
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Graphene-like carbon-nitrogen materials as anode materials for Li-ion and mg-ion batteries
TL;DR: In this article, the application of three graphene-like carbon-nitrogen structures as anode materials in lithium (Li)-ion and magnesium (Mg)-ion Batteries was explored.
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Strain Effect on Thermoelectric Performance of InSe Monolayer.
TL;DR: The enhanced figure of merit indicates that tensile strain is an effective way to improve the thermoelectric performance of InSe monolayer.
Accelerated Atomistic Modeling of Solid-State Battery Materials With Machine Learning
TL;DR: Machine learning has proven versatile for accelerating or circumventing first-principles calculations, thereby facilitating the modeling of materials properties that are otherwise hard to access as mentioned in this paper, and has been applied to materials for solid-state batteries, including electrodes, solid electrolytes, coatings, and complex interfaces involved.
Electronic and Interface Properties in Graphene Oxide/Hydrogen‐Passivated Ge Heterostructure
Abstract: Graphene oxide/H‐Ge (111) van der Waals (vdW) heterostructure is investigated by using first‐principle methods. An oxygen carbon ratio of 1:6 is applied to form a graphene oxide (GO) layer. A band inversion induced by built‐in electric field is observed, and a 7.4 meV indirect gap has been opened around the Dirac cone in GO layer. Being adsorbed on hydrogen‐passivated Ge surface, the band inversion occurs again around Fermi energy. Two‐dimensional electronic gas is confirmed with a 0.27 eV potential well appearing at the H layer. The charge transfer mechanism is revealed in order to illustrate band inversion and the electron accumulation on the Ge surface. Our calculation results provide insight into the electronic properties of GO and exhibit possible application of GO/H‐Ge (1111) heterostructure on the emerging electronic devices.
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