Synergistic effect of Cu2+ and Cu+ in SrTiO3 nanofibers promotes the photocatalytic reduction of CO2 to methanol

Electrical stability is significant in evaluating the application potentials for thin-film transistors (TFTs). In order to enhance the stability of the TFTs, the introduction of passivation layer is considered as an effective strategy. However, the posttreatment in conventional passivation process usually deteriorate the bottom semiconductor layer. In order to minimize the damages to the channel layer, in this work, UV-irradiated ZrO2 was prepared and integrated into the In2O3 TFT as passivation layer. The device performance dependent on ZrO2 thickness is investigated. It is found that the electrical performance of the In2O3 TFT is improved with the optimal passivation thickness, and the inherent mechanism is explained. In addition to the high performance, the excellent electrical stability of the passivated device is also confirmed by the positive bias stress test. Furthermore, the transparent ZrO2/In2O3 TFTs on indium tin oxide (ITO) glass substrates with Al2O3 dielectrics were successfully demonstrated, which indicates the great potential of ZrO2 passivation for the fabrication of transparent electronics.

UV-Treated ZrO2 Passivation for Transparent and High-Stability In2O3 Thin Film Transistor

• We predict that CaS is a promising transparent p-type conducting material. • High transmittance and low absorptivity hold the optical transparency. • Li, Na, K and Rb substituting at Ca sites are efficient acceptors. • The defect compensation effects are negligible due to rather low solubility of hole-killers. • The predicted holes concentration can exceed 10 17 cm −3 at 300 K. Using the first-principles method, the transparency and p-type conductivity for CaS are investigated. Our studies indicate CaS is an indirect gap semiconductor, and the band gap along Γ-X is 3.57 eV. The hole effective mass is 0.87 m 0 (m 0 is the mass of the free electron). Low absorption and reflectivity, as well as high transmittance ensure its transparency in the visible light region. Group VA (IA) atoms substituting S(Ca) are deep (shallow) acceptors. Based on hybrid functionals calculations, we find the ionization energies ε(0/-) for group IA atoms substituting Ca are less than 0.15 eV above the valance band maximum. The Li 2 S, Na 2 S, K 2 S and Rb 2 S are promising impurity sources. Taking Na-doped CaS as an example, we predict the holes′ concentration can reach 1.54 × 10 17 cm −3 under S-rich condition. High transparency, smaller hole effective mass, low ionization energy and high concentration of holes imply that CaS is promising transparent p-type conducting material. 

Promising transparency and p-type conductivity of Li, Na, K and Rb-doped CaS: A first-principles study

Fabrication of reduced graphene oxide (rGO) mediated ZnV2O6 nanosheets for enhancing photocatalytic CO2 reduction under UV and solar light irradiation

In recent years, the photocatalytic process has been widely employed as a simple and economical approach for the removal of various harmful pollutants and the production of valuable chemical fuels. Considerable efforts have been made to develop efficient photocatalysts as a key for environmental improvement. In this prospective, vanadium pentoxide (V2O5) has attracted a lot of attention as a photocatalyst due to its outstanding properties such as low cost, narrow bandgap (∼2.3 eV), optical and chemical stability, and multiple oxidation states. This article presents a comprehensive review of the current research activities, including physicochemical properties of V2O5, performance optimization strategies, photocatalytic mechanism, and the relationship between structure and activity of various V2O5-based photocatalysts, especially V2O5-based heterojunction photocatalysts. Finally, the possible future development, opportunities, and key challenges of V2O5-based photocatalysts are also summarized. We expect to be able to provide some references and suggestions for the rational design and fabrication of highly efficient V2O5-based photocatalysts for environmental improvement. 

V2O5-based photocatalysts for environmental improvement: Key challenges and advancements

In this report, In2O3 nanofiber networks (NFNs) were prepared by electrospinning and the field-effect transistors (FETs) based on In2O3 NFNs were fabricated. The effects of plasma treatment on the electrical performance of the FETs based on In2O3 NFNs were investigated. It is found that the oxygen vacancy in In2O3 NFNs can be tuned by the plasma treatment and the electrical performance of the FETs can be tuned accordingly. In this work, X-ray photoelectron spectroscopy was employed to investigate the chemical stoichiometry in In2O3 nanofibers with respect to plasma treatment conditions. The electrical performances of the FETs based on In2O3 NFNs treated by various plasma treatment conditions were systematically studied. It is found that, compared to those without O2 plasma treatment, the FET based on In2O3 NFNs treated by O2 plasma at 120 W for 5 min exhibits high electrical performance, including the variation of threshold voltage from −22.34 to 7.81 V and current on/off ratio from $\sim 10^{{3}}$ to $\sim 10^{{7}}$ and a $\mu _{\text {FE}}$ of 1.51 cm2 /Vs. This result demonstrates that moderate plasma treatment can be adopted to improve the electrical performance of the FETs based on metal oxide NFNs.

Performance Enhancement of Field-Effect Transistors Based on In₂O₃ Nanofiber Networks by Plasma Treatment

Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

https://doi.org/10.1088/1742-6596/2152/1/012008

High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

Application of Magnetic Carbon Nanotube Composite Nanospheres in Magnetic Solid-Phase Extraction of Trace Perfluorinated Compounds from Environmental Water Samples

Solution‐Processed High‐Performance p‐Type Perovskite NdAlO3 Thin Films for Transparent Electronics

In Situ Synthesis of Mapbx3 Perovskite Quantum Dot-Polycaprolactone Composites for Fluorescent 3d Printing Filament

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