Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

Time-resolved, pulsed terahertz spectroscopy has developed into a powerful tool to study charge carrier dynamics in semiconductors and semiconductor structures over the past decades. Covering the energy range from a few to about 100 meV, terahertz radiation is sensitive to the response of charge quasiparticles, e.g., free carriers, polarons, and excitons. The distinct spectral signatures of these different quasiparticles in the THz range allow their discrimination and characterization using pulsed THz radiation. This frequency region is also well suited for the study of phonon resonances and intraband transitions in low-dimensional systems. Moreover, using a pump-probe scheme, it is possible to monitor the nonequilibrium time evolution of carriers and low-energy excitations with sub-ps time resolution. Being an all-optical technique, terahertz time-domain spectroscopy is contact-free and noninvasive and hence suited to probe the conductivity of, particularly, nanostructured materials that are difficult or impossible to access with other methods. The latest developments in the application of terahertz time-domain spectroscopy to bulk and nanostructured semiconductors are reviewed.

/pdf/carrier-dynamics-in-semiconductors-studied-with-time-1u551csnya.pdf

Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

The principles and most-recent results of high-power THz generation through optical rectification using a tilted optical pulse front are described. Single-cycle THz pulses of multimicrojoule energies are generated at kHz repetition rates, and average THz power levels exceeding 1 mW can be generated at kHz-MHz repetition rates. Applications in nonlinear THz spectroscopy and THz coherent control are discussed.

Generation of high-power terahertz pulses by tilted-pulse-front excitation and their application possibilities

https://eprints.whiterose.ac.uk/80374/1/Davies%20et%20al%20Materials%20Today%2011%20pp18-26%20Mar%202008.pdf

Terahertz spectroscopy of explosives and drugs

Bandwidth-limited infrared pulses as short as 50 fs are generated in thin GaSe crystals by phase-matched optical rectification of 10 fs laser pulses. The central frequency of the transients is continuously tunable over a wide interval extending from 41 THz (λ=7 μm) to the far-infrared. The electric field of the THz transients is directly monitored via ultrabroadband free-space electro-optic sampling. A simulation of the spectra based on a plane-wave model shows excellent agreement with the experiment.

Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz

We report a broadband coherent terahertz detection system using GaP as a free-space electro-optic field sensor with a demonstrated 3 dB bandwidth of 3.6 THz, useful bandwidth of 7 THz, and a pulse width of 185 fs. These figures represent new records in the coherent detection of free-space THz radiation. Sensor response as a function of crystal thickness and copropagation velocity mismatch dispersion in the THz regime is studied.

7 terahertz broadband GaP electro-optic sensor

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7 terahertz broadband GaP electro-optic sensor