Carbon Nano Tube Field Effect Transistor (CNTFET) is a best futuristic device for nano scale range VLSI design than MOSFETs. This is due to the favourable physical properties of CNTFET. In this paper we present the comparative Stability analysis of a CNTFET based six transistor Static Random Access Memory (6T SRAM) cell for single nano tube CNTFET and multiple nano tubes CNTFET. The SRAM cell stability is measured by Static Noise Margin (SNM) of the cell. The SNM of 6T SRAM is also analysed for different chiral vectors. The comparison shows that the single tube and low chiral vector values provides high stability of CNTFET 6T SRAM cell than multiple tubes with high chiral vector. The simulation is carried out with 32nm technology.

Stability Analysis of 6T CNTFET SRAM Cell for Single and Multiple CNTs

Adder is a basic building block of the arithmetic logic unit (ALU). Designing of optimized adder circuit inherently makes a pavement for obtaining optimized ALU design. The implementation of metal–oxide–semiconductor field-effect transistor (MOSFET)-based very large-scale integration (VLSI) circuits in the nanoscale range is reached saturation condition. This is due to the MOSFET that meets significant issues like producing more leakage current and highly dependent on PVT variation during nanoscale fabrication. The carbon nanotube field-effect transistor (CNTFET) can overcome the demerits of MOSFET, and it supports low-power, delay-optimized VLSI circuit design. In this paper, different types of full adders are implemented using CNTFET and their power delay product (PDP) is analysed for single and multiple threshold voltages of CNTFET. From the simulation, the low and high PDP of full adders are identified. The PDP of full adders is optimized by varying the threshold voltage of CNTFET. The simulation is carried out using the HSPICE simulation tool. The Stanford University 32-nm-CNTFET model is used for the simulation.

PDP Analysis of CNTFET Full Adders for Single and Multiple Threshold Voltages

In this paper, a new high-speed and energy efficient 4-to-2 compressor cell was presented using carbon nanotube field effect transistors (CNFETs). CNFET is very suitable for high-frequency and lowvoltage applications. In addition, in this paper several conventional and state-of-the-art 4-to-2 compressor cells are surveyed and compared. In order to evaluate the proposed designs, computer simulations are carried out using 32nm-CMOS and 32nm-CNFET technologies. Simulations are conducted using various low voltage power supplies, different temperatures, frequencies and load capacitors. Results of simulation demonstrate predominance of the proposed design in terms of power consumption, delay, and power-delay product (PDP) compared to other 4-to-2 compressor cells and they confirm that the proposed design is the fastest 4-to-2 compressor in various working circumstances.

/pdf/a-new-high-performance-bridge-structure-for-4-to-2-4y2ofdrdq1.pdf

A New High-Performance Bridge Structure for 4-to-2 Compressor using CMOS and CNFET Technology

Pseudomonas putida is a potential strain in biological treatment to remove mercury contained in the effluent of petrochemical industry due to its mercury reductase enzyme that able to reduce ionic mercury to elementary mercury. Freeze-dried P. putida allows easy, inexpensive shipping, handling and high stability of the product. This study was aimed to freeze dry P. putida cells with addition of lyoprotectant. Lyoprotectant was added into the cells suspension prior to freezing. Dried P. putida obtained was then mixed with synthetic mercury. Viability of recovery P. putida after freeze dry was significantly influenced by the type of lyoprotectant. Among the lyoprotectants, tween 80 / sucrose was found to be the best lyoprotectant. Sucrose able to recover more than 78% (6.2E+09 CFU/ml) of the original cells (7.90E+09CFU/ml) after freeze dry and able to retain 5.40E+05 viable cells after 4 weeks storage in 4oC without vacuum. PEG pre-treated freeze dry cells and broth pre-treated freeze dry cells after freeze-dry recovered more than 64% (5.0 E+09CFU/ml) and >0.1% (5.60E+07CFU/ml). Freeze-dried P. putida cells in PEG and broth cannot survive after 4 weeks storage. Freeze dry also does not really change the pattern of growth P. putida but extension of lag time was found 1 hour after 3 weeks of storage. Additional time was required for freeze-dried P. putida cells to recover before introduce freeze-dried cells to more complicated condition such as mercury solution. The maximum mercury reduction of PEG pre-treated freeze-dried cells after freeze dry and after storage 3 weeks was 56.78% and 17.91 %.The maximum of mercury reduction of tween 80 / sucrose pre-treated freeze-dried cells after freeze dry and after storage 3 weeks were 26.35% and 25.03%. Freeze dried P .putida was found to have lower mercury reduction compare to the fresh P. putida that has been growth in agar. Result from this study may be beneficial and useful as initial reference before commercialize freeze-dried P. putida.

Assessing storage of stability and mercury reduction of freeze-dried Pseudomonas putida within different types of lyoprotectant

Designing a hearing aid device is one of the challenging applications recently, since it is useful for the people with hearing loss. For this purpose, various circuit designing procedures such as MOSFET and carbon nanotube field effect transistor (CNTFET) are introduced in the existing works. But it mainly lacks the following drawbacks: increased leakage current, not highly efficient, and increased area and power consumption. In order to mitigate these issues, this paper is aimed at designing an improved CNTFET (ECNFET) for hearing aid filtering application. The major objectives of the proposed work are leakage current minimization and the improvements in transconductance and mobility. At first, the layout is designed with 10 layers based on the specific dimensionalities, and different materials are placed in each and every layer. It includes gold, silicon, silicon dioxide, bismuth telluride, and carbon tube. Then, the parameters such as band gap, electron concentration, hole concentration, electron mobility, hole mobility, and insulator breakage voltage are verified to determine the efficiency of the layout. If all the parameters are satisfied, the characteristics such as voltage current, leakage current, mobility, and transconductance are validated. If all measures are satisfied, the library is created for the designed ECNFET layout by using the Comsol tool. Furthermore, the operational amplifier is designed based on the generated library function. After amplification, the hearing aid filter is designed with the use of the proposed ECNFET layout. The experimental validation of the proposed work and comparison with the existing method based on the measures of area consumption, power consumption, speed, and frequency range confirm the effectiveness of ECNTFET in filtering applications.

/pdf/improved-carbon-nanotube-field-effect-transistor-for-4z5i872byc.pdf

Improved Carbon Nanotube Field Effect Transistor for Designing a Hearing Aid Filtering Application

A detailed review on the Carbon Nanotube Filed Effect Transistors (CNTFETs) has been given. A little description about what are carbon nanotubes is also been covered. Various simulation results have also been included in this paper in order to provide better understanding about the carbon nanotubes field effect transistors.Characteristic Graphs of a C-CNTFET with n=10. m=11 (diameter=1.4246 nm) have been studied. Threshold voltage of CNTFETs vs n (for m=0) is also simulated. Equivalent high-frequency small-signal circuit model for a Nanotube transistor has also been analyzed. Also current voltage relationship of the CNTFET with respect to gate oxide thickness and dielectric constant has been analyzed.

Structure and a Detailed Analysis of Various Simulation Results of CNTFET: A Review

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Structure and a Detailed Analysis of Various Simulation Results of CNTFET: A Review