Prashant Tyagi
Council of Scientific and Industrial Research
27 Papers
76 Citations
Prashant Tyagi is an academic researcher from Council of Scientific and Industrial Research. The author has contributed to research in topics: Molecular beam epitaxy & Wurtzite crystal structure. The author has an hindex of 6, co-authored 24 publications. Previous affiliations of Prashant Tyagi include Academy of Scientific and Innovative Research.
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Papers
Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy
C. Ramesh,C. Ramesh,Prashant Tyagi,Prashant Tyagi,G. Abhiram,G. Abhiram,Gaurav Gupta,Gaurav Gupta,M. Senthil Kumar,M. Senthil Kumar,Sunil Singh Kushvaha,Sunil Singh Kushvaha +11 more
TL;DR: In this paper, the effect of growth temperature on the morphological, structural and optical properties of GaN nanostructures grown directly on flexible Ti metal foil by laser assisted molecular beam epitaxy (LMBE) was studied.
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Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire
R. Dixit,R. Dixit,Prashant Tyagi,Prashant Tyagi,Sunil Singh Kushvaha,Sreekumar Chockalingam,Brajesh S. Yadav,Nita Dilawar Sharma,M. Senthil Kumar +8 more
TL;DR: In this article, the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN layers on sapphire (0001) substrate by laser molecular beam epitaxy (LMBE) technique in the temperature range 500-700
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Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications
V. Aggarwal,V. Aggarwal,C. Ramesh,C. Ramesh,Prashant Tyagi,Prashant Tyagi,Shyam Babu Gautam,Shyam Babu Gautam,Alka Sharma,Alka Sharma,Sudhir Husale,Sudhir Husale,M. Senthil Kumar,M. Senthil Kumar,Sunil Singh Kushvaha,Sunil Singh Kushvaha +15 more
TL;DR: In this article, the buffer layer growth conditions in laser molecular beam epitaxy (LMBE) process were tuned to grow different epitaxial GaN nanostructures on sapphire (11-20) substrate by tuning buffer layer conditions for their application as UV-photodetectors.
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Controlled growth of GaN nanorods directly on flexible Mo metal foil by laser molecular beam epitaxy
Ch. Ramesh,Ch. Ramesh,Prashant Tyagi,Prashant Tyagi,Shyam Babu Gautam,Shyam Babu Gautam,S N Ojha,Gaurav Gupta,Gaurav Gupta,M. Senthil Kumar,M. Senthil Kumar,Sunil Singh Kushvaha,Sunil Singh Kushvaha +12 more
TL;DR: In this paper, the role of growth temperature, laser energy density and laser repetition rate in the growth of 1D GaN nanorod on metal foils was investigated, and the results showed that a higher growth temperature is very crucial in determining the formation of the GaN nano-structures.
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Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE
Ch. Ramesh,Ch. Ramesh,Prashant Tyagi,Prashant Tyagi,Brajesh S. Yadav,S N Ojha,Kuldeep Maurya,Kuldeep Maurya,M. Senthil Kumar,M. Senthil Kumar,Sunil Singh Kushvaha,Sunil Singh Kushvaha +11 more
TL;DR: In this article, a vertical aligned GaN nanowall networks (NWN) was grown on sapphire (0.0, 0, 0.1) substrates using laser assisted molecular beam epitaxy (LMBE) by tuning the SApphire pre-nitridation temperature (200-600°C).
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