Prashant Singh
Indian Institute of Information Technology, Allahabad
25 Papers
102 Citations
Prashant Singh is an academic researcher from Indian Institute of Information Technology, Allahabad. The author has contributed to research in topics: Ferroelectricity & Non-volatile memory. The author has an hindex of 7, co-authored 25 publications.
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Papers
Memory improvement with high-k buffer layer in metal/ SrBi2Nb2O9/Al2O3/silicon gate stack for non-volatile memory applications
TL;DR: In this article, structural and electrical properties of Al/SBN/Al2O3/Silicon gate stack for non-volatile memory applications were reported. But the authors did not investigate the memory window, leakage current density, hysteresis and fatigue characteristics.
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Preparation and characterization of Al2O3film deposited by RF sputtering and plasma enhanced atomic layer deposition
TL;DR: In this article, the structural and electrical properties of thin film of Al2O3 deposited by radio-frequency sputtering and plasma enhanced atomic layer deposition (PEALD) technique were investigated.
15
Design and analysis of RF MEMS Varactor for extended tuning range
P. Gupta,Prashant Singh,Rajshri Kumari Chaudhry,Pooja Srivastava +3 more
- 31 Oct 2013
TL;DR: In this article, a Varactor that can achieve a tuning range greater than 1.5 was developed and analyzed on COMSOL multiphysics simulation tool in accordance with standard POLYMUMP'S process.
12
Electrical properties of Pb[Zr0.35Ti0.65]O3 on PEALD Al2O3 for NVM applications
TL;DR: In this paper, a high-k buffer layer was used between the ferroelectric layer and the silicon substrate to improve the performance of 1T-type random access memory (FeRAM).
11
Lead-zirconate-titanate based metal/ferroelectric/high-K/semiconductor (M/Fe/High-K/S) gate stack for non-volatile memory applications
TL;DR: In this article, the authors investigated the electrical characteristics of metal/Ferroelectric/High-k/Si capacitor structures using sputtered Lead-Zirconate-Titanate (Pb[Zr0.35Ti0.65]O3 or PZT) and HfO2 thin films as ferroelectric and high-k material respectively.
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