Pragya Kushwaha
University of California, Berkeley
64 Papers
226 Citations
Pragya Kushwaha is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: BSIM & MOSFET. The author has an hindex of 14, co-authored 58 publications. Previous affiliations of Pragya Kushwaha include Indian Space Research Organisation & Indian Institute of Technology Kanpur.
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Papers
BSIM-CMG: Standard FinFET compact model for advanced circuit design
Juan Pablo Duarte,Sourabh Khandelwal,Aditya Sankar Medury,Chenming Hu,Pragya Kushwaha,Harshit Agarwal,Avirup Dasgupta,Yogesh Singh Chauhan +7 more
- 30 Oct 2015
TL;DR: The core model is updated with a new unified FinFET model, which calculates charges and currents of transistors with complex fin cross-sections and threshold voltage modulation from bulk-bias effects and bias dependent quantum mechanical confinement effects are incorporated into the new core model.
107
Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors
Harshit Agarwal,Pragya Kushwaha,Yen-Kai Lin,Ming-Yen Kao,Yu-Hung Liao,Avirup Dasgupta,Sayeef Salahuddin,Chenming Hu +7 more
TL;DR: A new approach using multi-layer FE to engineer the shape of negative-capacitance field-effect transistor is discussed, and the results show that it leads to better sub-threshold swing as well as lower power supply.
92
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures
TL;DR: In this article, the authors present compact models that capture published cryogenic temperature effects on silicon carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) and fin field effect transistor (FinFET) devices characteristics within the industry-standard Berkeley short-channel IGFET model (BSIM) framework for quantum computing.
72
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
Avirup Dasgupta,Shivendra Singh Parihar,Pragya Kushwaha,Harshit Agarwal,Ming-Yen Kao,Sayeef Salahuddin,Yogesh Singh Chauhan,Chenming Hu +7 more
TL;DR: In this paper, the authors proposed a compact model for nanosheet FETs that takes the effects of quantum confinement into account, and implemented it using Verilog-A in the BSIM-CMG framework for all simulations.
58
Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs
Yen-Kai Lin,Harshit Agarwal,Pragya Kushwaha,Ming-Yen Kao,Yu-Hung Liao,Korok Chatterjee,Sayeef Salahuddin,Chenming Hu +7 more
TL;DR: In this paper, the impact of inner fringing fields on the negative capacitance FinFET (NC-FinFET) and how this scales with the technology node was investigated.
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