Pradeep Kumar
Indian Institute of Technology Roorkee
8 Papers
24 Citations
Pradeep Kumar is an academic researcher from Indian Institute of Technology Roorkee. The author has contributed to research in topics: Hyperfine structure & Spin polarization. The author has an hindex of 4, co-authored 8 publications. Previous affiliations of Pradeep Kumar include Indian Institute of Technology Gandhinagar & Physical Research Laboratory.
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Papers
Functional bipolar resistive switching in AlN/Ni-Mn-In based magnetoelectric heterostructure.
Pradeep Kumar,Davinder Kaur +1 more
TL;DR: In this article, the influence of temperature on resistive switching characteristics in the AlN/Ni-Mn-In magnetoelectric (ME) heterostructure-based resistive random access memory (ReRAM) device was explored.
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Spin-polarization parameters and cross sections for electron scattering from zinc and lead atoms
TL;DR: A relativistic approach is employed to compute the differential and integrated cross sections, spin-polarization, and the spin- polarization parameters for the scattering of electrons from zinc and lead atoms in the energy range 2.0--200 eV.
Finite frequency Seebeck coefficient of metals: A memory function approach
TL;DR: In this paper, a generalized Drude form for the Seebeck coefficient in terms of thermoelectric memory function was introduced and the latter was calculated in various temperature and frequency limits.
Relativistic coupled-cluster-theory analysis of unusually large correlation effects in the determination of g j factors in Ca +
TL;DR: In this paper, the role of electron correlation effects in the determination of the factors of the $4s\phantom{\rule{0.16em}{0ex}}{}^{2}{S}_{1/2}, $4p\phantastic{\rule} 0.
Spin valve effect in sputtered FL-MoS2 and ferromagnetic shape memory alloy based magnetic tunnel junction
TL;DR: In this paper, a few-layer molybdenum disulfide (FL-MoS2) was fabricated as a non-magnetic spacer layer in Ni-Mn-In/FLMoS 2/Ni-mn-in magnetic tunnel junction (MTJ) using DC magnetron sputtering.