3 Papers
Pingge He is an academic researcher from Hong Kong University of Science and Technology. The author has contributed to research in topics: Semiconductor & Contact resistance. The author has an hindex of 2, co-authored 3 publications.
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Papers
Single-Crystalline Vanadium Dioxide Actuators
Run Shi,Run Shi,Xiangbin Cai,Weijun Wang,Jingwei Wang,Jingwei Wang,Dejun Kong,Nianduo Cai,Pengcheng Chen,Pingge He,Zefei Wu,Abbas Amini,Ning Wang,Chun Cheng +13 more
Abstract: Actuators that convert other forms of energy to mechanical energy have attracted extensive interest for their critical applications in microelectromechanical systems and miniature robotics. Recently, it is discovered that vanadium dioxide (VO2)‐based microscale bimorph actuators demonstrate comprehensive superiority of actuation performances, taking the good of the giant theoretical power density (7 J cm−3) and ultrafast response (∼picosecond) of crystalline VO2, while they still suffer from the intrinsic shortcomings of complex structures. Here, “single‐crystalline VO2 actuators” (SCVAs) that have unique self‐bending behavior upon temperature change are reported. This is realized by facilely and precisely controlling the phase structures via lateral stoichiometry‐engineering in VO2 nanobeams at the nanoscale level. These SCVAs exhibit remarkable actuation performances and admirable stability, which are equivalent or even superior to the reported VO2‐based conventional bimorph actuators. It is noteworthy that the gradual, reversible, and predictable bending of SCVAs enables a precise actuation control of related mechanics, such as the quantitative wind detector and thermal micromechanical claw. This work demonstrates the possibility of this strategy to enable single crystalline actuators excellent performance by internally lateral and gradual strain‐engineering.
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Oxide Inhibitor-Assisted Growth of Single-Layer Molybdenum Dichalcogenides (MoX2, X = S, Se, Te) with Controllable Molybdenum Release.
Run Shi,Run Shi,Pingge He,Xiangbin Cai,Zhuoqiong Zhang,Weijun Wang,Jingwei Wang,Jingwei Wang,Xuemeng Feng,Zefei Wu,Abbas Amini,Ning Wang,Chun Cheng +12 more
TL;DR: The utilization of oxide inhibitors (OIs) covering Mo source during CVD reactions to manipulate the release of Mo vapor enables a comprehensive understanding and precise control of the reaction kinetics for improved growth of 2D MoX2.
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•Posted Content
Bridging the gap between atomically thin semiconductors and metal leads
Xiangbin Cai,Zefei Wu,Xu Han,Shuigang Xu,Jiangxiazi Lin,Tianyi Han,Pingge He,Xuemeng Feng,Liheng An,Run Shi,Jingwei Wang,Zhehan Ying,Yuan Cai,Mengyuan Hua,Junwei Liu,Ding Pan,Chun Cheng,Ning Wang +17 more
TL;DR: In this article, the authors demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer transition metal dichalcogenide semiconductors by engineering interfacial bonding distortion.
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