Ping Lai

TL;DR: In this article, a dual probe for near field simultaneous measurement of both electric and magnetic fields is investigated with a microstrip line as the device under test (DUT), and the characterization includes frequency response, transmission performance, symmetry, reflection, the intrusion of probe to the DUT, isolation of electric and Magnetic field responses, field profile and spatial resolution, and differential electric field suppression.

TL;DR: In this article, the authors investigated on-state electroluminescence (EL) characteristics in fresh GaN-based HEMTs under different onstate bias conditions and showed that the intensity of the onstate EL emitted by AlGaN/GaN HEMT with relatively high DS was monotonically increased as the gate voltage increased, which indicated that the degradation was related to this finger.

TL;DR: In this paper, the authors have submitted the AlGaN/GaN High electron mobility transistors (HEMTs) to the high temperature reverse bias (HTRB) stress to assess their reliability for high voltage operations.

TL;DR: In this paper, a method and a system for return-to-zero analysis of component failure is presented, where a component failure physical fault tree is established by the system, and the failure tree is converted into a failure locating fault tree, and a component fault dictionary corresponding to mechanism causes and failure features is established.