Philipp Staudinger

TL;DR: This work develops a novel method to switch and maintain a metastable phase during a metal-organic vapor phase epitaxy process based on epitaxial lateral overgrowth and compares it with standard selective area epitaxy techniques, and achieves unprecedented large WZ layer dimensions exceeding 100 µm2.

TL;DR: This work reports for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy by varying the orientation of predefined templates.

TL;DR: It is demonstrated for the first time that individual current channels can be addressed directly by laser irradiation and the resulting quantization of the photocurrent represents the ultimate limit of photodetectors, allowing for advanced concepts including highly resolved imaging, light effect transistors and single photon detectors with practically zero off-state current.

TL;DR: The reproducible transition from hole- to electron-dominated transport is clearly demonstrated by the observation of electron-driven negative differential resistance and provides a significant step towards a better understanding of charge-trapping-induced transport in Ge nanostructures.