Ph. Grosse
7 Papers
141 Citations
Ph. Grosse is an academic researcher. The author has contributed to research in topics: Lasing threshold & Vertical-cavity surface-emitting laser. The author has an hindex of 3, co-authored 7 publications.
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Papers
Electrically driven hybrid Si/III-V lasers based on adiabatic mode transformers
Badhise Ben Bakir,Nicolas Olivier,Ph. Grosse,S. Messaoudene,S. Brision,E. Augendre,P. Philippe,Karen Gilbert,D. Bordel,Julie Harduin,J-M. Fedeli +10 more
TL;DR: In this article, the authors reported the first Silicon/III-V evanescent laser based on adiabatic mode transformers, which is formed by two vertically superimposed waveguides separated by a 100nm-thick SiO2 layer.
77
Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes
Mathieu Munsch,Julien Claudon,N. S. Malik,K. Gilbert,Ph. Grosse,Jean-Michel Gérard,F. Albert,Fabian Langer,T. W. Schlereth,Maciej Pieczarka,Sven Höfling,M. Kamp,Alfred Forchel,Stephan Reitzenstein +13 more
TL;DR: In this article, the authors demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators embedding a quantum dot (QD) active layer.
53
InP on SOI devices for optical communication and optical network on chip
J-M. Fedeli,Badhise Ben Bakir,Nicolas Olivier,Ph. Grosse,L. Grenouillet,E. Augendre,P. Phillippe,Karen Gilbert,D. Bordel,Julie Harduin +9 more
TL;DR: In this article, the authors developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and can be directly modulated up to 5G at different wavelengths.
15
1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material
Ph. Gilet,E. Pougeoise,L. Grenouillet,Ph. Grosse,Nicolas Olivier,S. Poncet,A. Chelnokov,Jean-Michel Gérard,R. Stevens,Regis Hamelin,Mattias Hammar,Jesper Berggren,Petrus Sundgren +12 more
- 23 Feb 2007
TL;DR: In this paper, the performance of top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GAAs (B) multiple quantum wells (MQW) or InAs/GAs (C) quantum dots (QD), was investigated for optical interconnection applications.
3
Gallium arsenide second‐window quantum dot VCSEL
E. Pougeoise,Ph. Gilet,N. Dunoyer,Ph. Grosse,S. Poncet,Laurent Grenouillet,Ph. Duvaut,A. Chelnokov,Jean-Michel Gérard,R. Hamelin,C. Rossat +10 more
TL;DR: In this article, a 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting laser with top distributed Bragg reflectors contacts was processed on GaAs substrate.
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