Peter De Wolf

TL;DR: In this paper, a scanning proximity microscope was used to measure the electrical potential in a semiconductor element by applying one or more voltages over the semiconductor elements, placing at least one conductor in contact with the semi-conductor element, injecting a substantially zero current with the conductor, changing the position of the conductor and repeating the measuring and changing steps.

TL;DR: In this article, the effect of contrast reversal in scanning capacitance microscopy (SCM) imaging is discussed, taking into account the implications for samples which contain both p-type and n-type dopants.

TL;DR: In this paper, a method for measuring the resistance or conductivity between two or more conductors which are placed against a semiconductor element, the conductors are placed either in contact with the top surface or one conductor is placed in the form of a large ohmic contact applied to the bottom surface of the semiconductor elements.

TL;DR: In this paper, the authors have imaged several n-type metaloxide-semiconductor transistors with different source and drain architectures to assess the feasibility of extracting useful figures of merit, such as the effective channel length of a device, from the data.