Peter Coppens

TL;DR: In this article, the most important intrinsic reliability mechanisms for GaN power devices are discussed, including gate dielectric reliability, Ohmic contact reliability, accelerated drain stress testing (high temperature reverse bias--HTRB) and high voltage device wear-out testing (High voltage off-state stress--HVOS).

TL;DR: In this article, a GaN/GaN power device with single digit Ron values of 6mΩ and leakage current of ∼100nA is presented, which is a first step to allow AlGaN/GAN power devices to compete with Si IGBTs and SiC MOSFETs.

TL;DR: This paper reports on the technology and design aspects of an industrial DHEMT process for 650V rated GaN-on-Si power devices, using an in-situ MOCVD grown SiN as surface passivation and gate dielectric, with low interface state density and excellent TDDB.

TL;DR: In this article, two methods are proposed to prevent the bevel degradation during deep reactive ion etching using an oxide hard mask, in one case this oxide mask is deposited and in the second case the oxide hard masks is grown.