Peng Wan
Chinese Academy of Sciences
4 Papers
Peng Wan is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Transmission electron microscopy & Wafer. The author has an hindex of 3, co-authored 4 publications.
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Papers
The diffusion barrier effect of Fe-Ni UBM as compared to the commercial Cu UBM during high temperature storage
TL;DR: In this article, high temperature storage was conducted on SnAgCu/Fe-Ni (73% Ni and 45% Ni) as well as SnAg Cu/Cu solder joints at 125, 150, and 175°C to evaluate the diffusion barrier effect of Fe-Ni under bump metallization (UBM).
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Theoretical and experimental investigations on mechanical properties of (Fe,Ni)Sn2 intermetallic compounds formed in SnAgCu/Fe-Ni solder joints
TL;DR: In this paper, the effect of Ni element on mechanical properties of FeSn2 phase was investigated by means of nano-indentation measurements and first-principles calculations, and the calculated results showed that Young's modulus increased from 134.8GPa to 139.9GPa as the Ni concentrations increased from 0.% to 4.2
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A superior interfacial reliability of Fe–Ni UBM during high temperature storage
TL;DR: In this article, the authors compared the performance of Fe-Ni UBMs and Cu-UBM in terms of shear strength after reflow and 150°C high temperature storage following the industrial JEDEC standards.
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Gradient growth of fcc and bcc phase within FexNi1−x (50 < x < 75) films during direct-current wafer electroplating
Li-Yin Gao,Peng Wan,Zhi-Quan Liu +2 more
TL;DR: In this article, a series of Fe-Ni films with compositions ranging from 15 to 80% iron were electrodeposited on 8-inch silicon wafer, and the uniformity on brightness, phase structure and grain size of FeNi magnetic films were investigated through SEM (scanning electron microscopy) and XRD (X-ray diffraction).
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