Peng Jiangtao
Ningbo University
25 Papers
125 Citations
Peng Jiangtao is an academic researcher from Ningbo University. The author has contributed to research in topics: Crystal & Luminescence. The author has an hindex of 9, co-authored 25 publications.
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Papers
Enhanced emission of 2.7 μm from Er3+/Nd3+-codoped LiYF4 single crystals
Xiaobo Zhuang,Haiping Xia,Haoyang Hu,Jianxu Hu,Wang Peiyuan,Peng Jiangtao,Zhang Yuepin,Haochuan Jiang,Baojiu Chen +8 more
TL;DR: In this article, an Er 3+ /Nd 3+ co-doped LiYF 4 single crystal of ∼ Φ 12mm × 95mm size with high quality was grown by a Bridgman method.
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Tm3+ and Nd3+ singly doped LiYF4 single crystals with 3-5 \mu m mid-infrared luminescence
TL;DR: LiYF4 single crystals possess high transmittance of over 85% in the 2.5-6 \mu m range as discussed by the authors, which indicates that Nd3+ and Tm3+ singly doped crystals may be promising materials for application in MIR lasers.
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Intense 2.7 μm emission from Er3+/Tm3+/Pr3+ triply doped LiYF4 single crystal grown by Bridgman method
Haoyang Hu,Haiping Xia,Jianxu Hu,Wang Peiyuan,Peng Jiangtao,Zhang Yuepin,Haochuan Jiang,Baojiu Chen +7 more
TL;DR: In this article, the possible energy transfer processes and the luminescent mechanisms for the Er 3+ /Tm 3+/Pr 3+ + triply doped LiYF 4 was investigated.
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Patent
Tm /Dy doped LiYF4 monocrystal for white light LED (Light Emitting Diode) and preparation method thereof
Haiping Xia,Lei Tang,Wang Peiyuan,Peng Jiangtao,Haoyang Hu,Zhang Yuepin +5 more
- 10 Jul 2013
TL;DR: In this paper, a Tm /Dy doped LiYF4 monocrystal for white light LED (Light Emitting Diode) and a preparation method thereof is presented.
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Concentration effect of Nd3+ ion on the spectroscopic properties of Er3+/Nd3+ co-doped LiYF4 single crystal
Wang Peiyuan,Haiping Xia,Peng Jiangtao,Haoyang Hu,Lei Tang,Zhang Yuepin,Baojiu Chen,Haochuan Jiang +7 more
TL;DR: In this paper, high quality Er3+/Nd3+:LiYF4 single crystals were grown by a Bridgman method and their spectroscopic properties were studied to understand the Nd3+, concentration effect upon excitation of an 800-nm laser diode.
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