The severe consequences of fossil fuel consumption have resulted in a need for alternative sustainable sources of energy. Conversion and storage of solar energy via a renewable method, such as photocatalysis, holds great promise as such an alternative. One-dimensional (1D) nanostructures have gained attention in solar energy conversion because they have a long axis to absorb incident sunlight yet a short radial distance for separation of photogenerated charge carriers. In particular, well-ordered spatially high dimensional architectures based on 1D nanostructures with well-defined facets or anisotropic shapes offer an exciting opportunity for bridging the gap between 1D nanostructures and the micro and macro world, providing a platform for integration of nanostructures on a larger and more manageable scale into high-performance solar energy conversion applications. In this review, we focus on the progress of photocatalytic solar energy conversion over controlled one-dimension-based spatially ordered architecture hybrids. Assembly and classification of these novel architectures are summarized, and we discuss the opportunity and future direction of integration of 1D materials into high-dimensional, spatially organized architectures, with a perspective toward improved collective performance in various artificial photoredox applications.

One-dimension-based spatially ordered architectures for solar energy conversion

Transition metal silicides: fundamentals, preparation and catalytic applications

Highly conductive and transparent indium-tin oxide (ITO) single-crystalline nanowires, formed by the vapor-liquid-solid (VLS) method, hold great promise for various nanoscale device applications. However, increasing an electrical conductivity of VLS grown ITO nanowires is still a challenging issue due to the intrinsic difficulty in controlling complex material transports of the VLS process. Here, we demonstrate a crucial role of preferential indium nucleation on the electrical conductivity of VLS grown ITO nanowires using gold catalysts. In spite of the fact that the vapor pressure of tin is lower than that of indium, we found that the indium concentration within the nanowires was always higher than the nominal composition. The VLS growth of ITO through gold catalysts significantly differs from ITO film formations due to the emergence of preferential indium nucleation only at a liquid-solid interface. Furthermore, we demonstrate that the averaged resistivity of ITO nanowires can be decreased down to 2.1 × 10(-4) Ω cm, which is the lowest compared with values previously reported, via intentionally increasing the tin concentration within the nanowires.

/pdf/impact-of-preferential-indium-nucleation-on-electrical-3d9v34w8wx.pdf

Impact of preferential indium nucleation on electrical conductivity of vapor-liquid-solid grown indium-tin oxide nanowires.

If nanostructured thermoelectric materials are to be used for future energy harvesting and power generation applications, scalable production of thermoelectric nanostructures must be developed. Herein we report a vapor phase conversion method to synthesize nanowire (NW) arrays of semiconducting higher manganese silicides (HMS, or MnSi1.75) for enhanced thermoelectric applications. Dense arrays of silicon NWs obtained by metal-assisted chemical etching were converted to single-crystalline HMS NW arrays with the original nanoscale morphology preserved by reacting with Mn vapor in a sealed stainless steel reactor at 950 °C. Structural characterization by X-ray and electron diffraction and high-resolution transmission electron microscopy confirm that the converted NWs are single-crystalline NWs of HMS phases such as Mn7Si12, Mn27Si47, and Mn39Si68. Investigations of the conversion process using in situ high resolution powder X-ray diffraction (HRPXRD) and mechanistic experiments reveal that the presence of ex...

Vapor Phase Conversion Synthesis of Higher Manganese Silicide (MnSi1.75) Nanowire Arrays for Thermoelectric Applications

We report a general method for determining the spin polarization from nanowire materials using Andreev reflection spectroscopy implemented with a Nb superconducting contact and common electron-beam lithography device fabrication techniques. This method was applied to magnetic semiconducting Fe1–xCoxSi alloy nanowires with x = 0.23, and the average spin polarization extracted from 6 nanowire devices is 28 ± 7% with a highest observed value of 35%. Local-electrode atom probe tomography (APT) confirms the homogeneous distribution of Co atoms in the FeSi host lattice, and X-ray magnetic circular dichroism (XMCD) establishes that the elemental origin of magnetism in this strongly correlated electron system is due to Co atoms.

Spin Polarization Measurement of Homogeneously Doped Fe1–xCoxSi Nanowires by Andreev Reflection Spectroscopy

We present the chemical vapor deposition (CVD) reactions of the single source precursor Fe(SiCl3)2(CO)4 over Si, Ge, CoSi2/Si, and CoSi/Si substrates to explore the growth and doping processes of silicide nanowires (NWs). Careful investigation of the composition and morphology of the NW products and the intruded silicide films from which they nucleate revealed that the group IV elements (Si, Ge) in the NW products originate from both the precursor and the substrate, while the metal elements incorporated into the NWs (Fe, Co) originate from vapor phase precursor delivery. The use of a Ge growth substrate enabled the successful synthesis of Fe5Si2Ge NWs, the first report of a metal silicide−germanide alloy NW. Further, investigation of the pyrolysis of the CoSiCl3(CO)4 precursor revealed independent delivery of Co and Si species during CVD reactions. This understanding enabled a new, more robust two-precursor synthetic route to Fe1−xCoxSi alloy NWs using Fe(SiCl3)2(CO)4 and CoCl2.

Mechanistic Investigation of the Growth of Fe1−xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1−yGey)3 (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires

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Mechanistic Investigation of the Growth of Fe1−xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1−yGey)3 (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires