A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material characteristics, including its high critical electric field, high saturation velocity, high electron mobility, and outstanding thermal stability. Therefore, the superior performance is represented by GaN-based high electron mobility transistor (HEMT) devices. They can perform at higher currents, voltages, temperatures, and frequencies, making them suitable devices for the next generation of high-efficiency power converter applications, including electric vehicles, phone chargers, renewable energy, and data centers. Thus, this review article will provide a basic overview of the various technological and scientific elements of the current GaN HEMTs technology. First, the present advancements in the GaN market and its primary application areas are briefly summarized. After that, the GaN is compared with other devices, and the GaN HEMT device’s operational material properties with different heterostructures are discussed. Then, the normally-off GaN HEMT technology with their different types are considered, especially on the recessed gate metal insulator semiconductor high electron mobility transistor (MISHEMT) and p-GaN. Hereafter, this review also discusses the reliability concerns of the GaN HEMT which are caused by trap effects like a drain, gate lag, and current collapse with numerous types of degradation. Eventually, the breakdown voltage of the GaN HEMT with some challenges has been studied.

https://www.mdpi.com/2073-4352/12/11/1581/pdf?version=1667813642

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device’s performance are addressed.

https://www.mdpi.com/2072-666X/13/12/2133/pdf?version=1669902475

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

In this work, the effect of in situ SiNx grown with different carrier gas on the structural and electrical properties of the SiNx/AlGaN/GaN MIS-HEMTs is studied. It was found that the growth rate of SiNx grown with N2 as carrier gas (N2-SiNx) is more sensitive to different growth conditions, while the growth rate of SiNx grown with H2 as carrier gas (H2-SiNx) is very stable due to the inhibiting effects of H2 carrier gas on the SiH4–NH3 forward reactions. More importantly, a continuous and smooth SiNx growth at the initial stage can be realized with H2 carrier gas due to its faster surface migration, leading to a decent surface morphology and sharp interface of H2-SiNx. As a result, the SiNx passivated device with H2 as carrier gas shows improved performance compared to that with N2 as carrier gas, featuring ultra-low interface-state density of 2.8 × 1010 cm−2 eV−1, improved on- and off-state current, reduced threshold voltage shift, and mitigated current collapse, especially after long-term electrical stress. These results not only elaborate on the growth mechanisms of in situ SiNx with different carrier gases but also highlight the advances of H2 as carrier gas for in situ SiNx growth, providing an effective strategy to tailor the passivation schemes for GaN-based devices.

Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs

In this work, the electrical characteristics and bias stress reliability of GaN/AlN superlattices (SLs) metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with Al2O3 dielectric are experimentally investigated. In comparison to the conventional AlGaN barrier MIS-HEMTs, the GaN/AlN SLs MIS-HEMTs exhibit a higher ON/OFF current ratio (<inline-formula> <tex-math notation="LaTeX">$10^{{{10}}}$ </tex-math></inline-formula>), higher gate forward breakdown voltage (BV) (15.2 V) and OFF -state BV (495 V), lower ON-resistance (<inline-formula> <tex-math notation="LaTeX">$9.5~\Omega $ </tex-math></inline-formula>/mm<inline-formula> <tex-math notation="LaTeX">$^{{-{1}}}$ </tex-math></inline-formula>). Moreover, the threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{{\text {th}}}$ </tex-math></inline-formula>) shift and ON-resistance (R on) degradation under bias stress are further monitored. The GaN/AlN SLs MIS-HEMTs demonstrate excellent <inline-formula> <tex-math notation="LaTeX">$V_{{\text {th}}}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$R_{{\text {on}}}$ </tex-math></inline-formula> stability, attributed to the superior dielectric/barrier interface quality and effective 2-D electron gas confinement provided by the GaN/AlN superlattice structure. These results ensure the superior performance and stability of GaN/AlN SLs MIS-HEMTs for power/RF applications.

High On/Off Current Ratio and High $\textit{V}_{\text{th}}$/$\textit{R}_{\text{on}}$ Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

With continuous size scaling, the surface dangling bonds and short-channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra-thin short-channel tunneling transistor is developed comprising all 2D- components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in-plane WSe2 channel, the switch states are realized by the gate-regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic-emission and tunneling. Under dual-gate configuration, the transistor exhibits high performance with drive current of 4.58 µA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain-induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high-speed tunneling current and unique short-channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof-of-concept transistor architecture relying on dual-gate modulation, opening up a promising perspective for next generation low-power, high-density, and large-scale IC technologies. 

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiNx/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiNx only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiNx/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.

/pdf/low-threshold-voltage-shift-in-algan-gan-mis-hemts-on-si-1ty7ld5g.pdf

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

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Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric