Payam Amin
Intel
25 Papers
136 Citations
Payam Amin is an academic researcher from Intel. The author has contributed to research in topics: Qubit & Quantum dot. The author has an hindex of 8, co-authored 22 publications.
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Papers
Qubits made by advanced semiconductor manufacturing
Anne-Marije Zwerver,Tobias Krähenmann,Thomas F. Watson,Lester Lampert,Hubert C. George,Ravi Pillarisetty,Stephanie A. Bojarski,Payam Amin,S.V. Amitonov,J.M. Boter,Roman Caudillo,D. Correas-Serrano,Juan Pablo Dehollain,G. Droulers,Eric R. Henry,Roza Kotlyar,Mario Lodari,F. Lüthi,David J. Michalak,Brennen K. Mueller,Samuel F. Neyens,J.S. Roberts,Nodar Samkharadze,Guoji Zheng,Otto Zietz,Giordano Scappucci,Menno Veldhorst,Lieven M. K. Vandersypen,James S. Clarke +28 more
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Quantum Transport Properties of Industrial Si 28 / Si O 2 28
D. Sabbagh,Nicole K. Thomas,Jessica M. Torres,R. Pillarisetty,Payam Amin,Hubert C. George,Singh Kanwaljit,A. Budrevich,M. Robinson,D. Merrill,L. Ross,Jeanette M. Roberts,Lester Lampert,L. Massa,S.V. Amitonov,J.M. Boter,G. Droulers,H. G. J. Eenink,M. van Hezel,D. Donelson,Menno Veldhorst,Lieven M. K. Vandersypen,James S. Clarke,Giordano Scappucci +23 more
TL;DR: The structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300mm Si wafers in an industrial CMOS fab were investigated in this article.
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens,Ryan H. Foote,Brandur Thorgrimsson,T. J. Knapp,Thomas McJunkin,Lieven M. K. Vandersypen,Payam Amin,Nicole K. Thomas,James S. Clarke,Donald E. Savage,M. G. Lagally,Mark Friesen,Susan Coppersmith,Mark A. Eriksson +13 more
TL;DR: In this paper, activation energy (transport) measurements in the quantum Hall regime were performed to determine the source of the disorder affecting the valley splitting in Si/SiGe heterostructures.
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens,Ryan H. Foote,Brandur Thorgrimsson,T. J. Knapp,Thomas McJunkin,Lieven M. K. Vandersypen,Payam Amin,Nicole K. Thomas,James S. Clarke,Donald E. Savage,M. G. Lagally,Mark Friesen,Susan Coppersmith,Mark A. Eriksson +13 more
TL;DR: In this paper, the authors show that these heterostructures remain hosts for high-mobility electron gases, and they interpret their results using tight binding theory and argue that their results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings.
Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$.
D. Sabbagh,Nicole K. Thomas,Jessica M. Torres,R. Pillarisetty,Payam Amin,Hubert C. George,Singh Kanwaljit,A. Budrevich,Max Robinson,D. Merrill,L. Ross,J.S. Roberts,Lester Lampert,L. Massa,S.V. Amitonov,J.M. Boter,G. Droulers,H. G. J. Eenink,M. van Hezel,D. Donelson,Menno Veldhorst,Lieven M. K. Vandersypen,James S. Clarke,Giordano Scappucci +23 more
TL;DR: The structural and quantum transport properties of isotopically enriched stacks deposited on 300 mm Si wafers in an industrial CMOS fab were investigated in this paper, where highly uniform films with an isotopic purity greater than 99.92% were obtained with an equivalent oxide thickness of 17 nm.