An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The effective heat of formation (ΔH’) concept allows heats of formation to be calculated as a function of concentration. In this work the effective heat of formation rule is used to predict first phase formation in metal‐aluminum thin‐film systems and to predict subsequent phase sequence for thin metal films on thick aluminum or thin aluminum on thick metal substrates. The effective concentration at the growth interface is taken to be that of the lowest temperature eutectic (liquidus) for the binary system. Although the effective heat of formation rule may predict that formation of a certain phase would lead to the largest free energy change, this phase does not necessarily form at the moving reaction interface if it has difficulty to nucleate. By excluding phases with a large number of atoms per unit cell and which thus have difficulty to nucleate, the effective heat of formation rule successfully predicts first phase aluminide formation for all 15 metal‐aluminum binary systems for which experimental data could be found. It is also shown how the effective heat of formation rule can be used to predict formation and decomposition of aluminide phases in contact with each other or in contact with their component metals.

Prediction of phase formation sequence and phase stability in binary metal-aluminum thin-film systems using the effective heat of formation rule

A review of thin-film aluminide formation

This paper reports on the experimental determination of the maximum post-process annealing temperature for standard 035 /spl mu/m CMOS wafers with aluminum based interconnections and tungsten plugs, without introducing significant modifications to their standard characteristics The impact of increasing the post-processing temperature from 475/spl deg/C to 575/spl deg/C, for periods varying between 30 and 90 min, on both the front and back end is analyzed 035 /spl mu/m CMOS technologies with different Al alloys, Al-1wt%Si-05wt%Cu (AlSiCu) or Al-05wt%Cu (AlCu), and different back end structures are considered It is illustrated that the maximum annealing temperature is a function of the structure and composition of the interconnection layers and their maximum allowable resistance increase It is also demonstrated that the transistor characteristics, the silicide quality and the leakage currents are as good as unaffected by annealing for 90 min at temperatures up to 525/spl deg/C

Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers

This paper describes a method to improve the electromigration capacity of Al‐Cu or Al thin‐film interconnection metallurgy by incorporating a layer of intermetallic compounds of Al and transition metals. The improvement in lifetime can be 100 times greater than comparable Al‐Cu structures tested under the same conditions. Certain structural properties of the intermetallic compounds have been related qualitatively to the failure mode and electromigration lifetime. Results are discussed in an attempt to clarify the mechanisms by which an ordered phase (compound layer) can improve electromigration lifetime. Life‐test data obtained from the thin‐film metallurgy with Al–transition‐metal compound structures indicate that improvements can be achieved by one or a combination of the following factors: (a) blocking void propagation through the film, (b) reducing the rate of mass transport by electromigration, and (c) eliminating divergent damage sites by increasing the degree of preferred grain orientation. In many cases, the thickness of the intermetallic layer can be adjusted to yield a significant improvement in lifetime with only a small increase in stripe resistance.

Intermetallic compounds of Al and transitions metals: Effect of electromigration in 1-2-μm-wide lines

Intermetallic coumpound formation at metal–metal interfaces was observed for thin film couples of Al and transition metals such as Cr, Ti, Hf, Zr, Co, Ta, Pd, and Pt. The Al–Cr system was investigated in some detail using a conductance method and nuclear backscattering for reaction‐rate measurements. The compounds CrAl7 and Cr2Al11 were identified and their growth was found to be diffusion controlled. The temperature dependence of the rate constant for CrAl7 obeyed an Arrhenius plot from 300° to 450 °C with an activation energy of 1.91±0.1 eV. The Al‐rich phases of the remaining transition metals were investigated; the compounds either exhibited a planar interface with parabolic growth kinetics or an irregular interface with nonparabolic growth. An empirical relationship involving the melting point and stability of the compounds was proposed to explain the different growth kinetics.

Kinetics of compound formation in thin film couples of Al and transition metals

KINETICS OF COMPOUND FORMATION IN THIN FILM COUPLES OF Al AND TRANSITION METALS.

A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200° C and 525° C for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6×10 - 4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

Intermetallic compound layer in thin films for improved electromigration resistance

A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200° C. and 525° C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6×10-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.

Method for forming intermetallic layers in thin films for improved electromigration resistance

Leiterstreifenstruktur, ihre verwendung und herstellung

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

Paul S. Ho

Author Tools

Chat about Author