An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen

Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600°C or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.

A method for depositing and curing low-k films for gapfill and conformal film applications

A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the remotely generated plasma may be introduced directly into the chamber through a processing gas exhaust or other port, and then be exhausted from the chamber by traveling through the gas distribution shower head to the foreline. In one embodiment of the present invention, this reverse flow of remote cleaning plasma is maintained for the duration of the chamber cleaning step. In an alternative embodiment, the direction of flow of the remote cleaning plasma through the chamber is alternated between this reverse flow and a conventional forward flow.

Backflush chamber clean

A compact, self-contained remote plasma generator is mounted on the lid of a semiconductor processing chamber to form an integrated substrate processing system. The remote plasma generator is activated in a clean operation to generate cleaning plasma species to provide better cleaning of the chamber and lower perfluorocarbon emissions than in situ plasma clean processes. A three-way valve is adjustable to control gas flow to the chamber. During the clean operation, the three-way valve directs a cleaning plasma precursor from a first gas line to the remote plasma generator to generate cleaning plasma species which are flowed to the chamber for cleaning deposits therein. During a deposition process, the three-way valve directs a first process gas from the flat gas line to the chamber, bypassing the remote plasma generator. The first process gas is typically mixed with a second process gas supplied from a second gas line in a mixing device prior to entering the chamber for depositing a layer on a substrate disposed therein.

Integration of remote plasma generator with semiconductor processing chamber

A conduit interlock assembly for being clamped to portions of a pair of conduits which portions are adjacent an end-to-end interconnection between the two conduits and which conduit interlock assembly is for surrounding a conduit fastener or fasteners fastening the conduits together in the end-to-end connection. The conduit interlock assembly includes a normally open switch for being closed upon the conduit interlock assembly being clamped to the conduits to provide an indication that the conduits are in the end-to-end interconnection and which switch is opened upon the conduit interlock assembly being unclamped from the conduits to provide an indication that the conduits possibly are not in the end-to-end interconnection.

Conduit interlock assembly

PROBLEM TO BE SOLVED: To form an integrated substrate treatment system where a compact, self-contained remote plasma generator is mounted on the lid of a semiconductor treatment chamber. SOLUTION: The remote plasma generator is activated during a washing process, generates washing plasma species, and reduces perfluorocarbon emission. A three-way valve adjustably controls gas flow to the chamber. During the washing process, the three-way valve leads a washing plasma precursor from a first gas pipeline to the remote plasma generator, and the washing plasma species are generated for flowing to the chamber to wash build-up in the chamber. During a deposition process, the three-way valve bypasses the remote plasma generator for leading a first treatment gas from the first gas pipeline to the chamber. The first treatment gas is generally mixed with a second one supplied from a second gas pipeline in a mixing device before being introduced to the chamber to deposit a layer onto a substrate arranged in the chamber.

Integration of remote plasma generator with semiconductor treatment chamber

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Integration of remote plasma generator with semiconductor processing chamber

Conduit interlock assembly

Integration of remote plasma generator with semiconductor treatment chamber