Patrick Verdonck
Katholieke Universiteit Leuven
108 Papers
684 Citations
Patrick Verdonck is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 20, co-authored 107 publications. Previous affiliations of Patrick Verdonck include IMEC.
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Papers
3D stacked IC demonstration using a through Silicon Via First approach
J. Van Olmen,Abdelkarim Mercha,G. Katti,Cedric Huyghebaert,J. Van Aelst,E. Seppala,Zhao Chao,Silvia Armini,Jan Vaes,R. C. Teixeira,M. Van Cauwenberghe,Patrick Verdonck,K. Verhemeldonck,Anne Jourdain,Wouter Ruythooren,M. de Potter de ten Broeck,A. Opdebeeck,Thomas Chiarella,Bertrand Parvais,Ingrid Debusschere,T. Y. Hoffmann,B. De Wachter,Wim Dehaene,Michele Stucchi,Michal Rakowski,Philippe Soussan,R. Cartuyvels,Eric Beyne,Serge Biesemans,Bart Swinnen +29 more
- 01 Dec 2008
TL;DR: In this paper, the authors report the first demonstration of 3D integrated circuits obtained by die-to-die stacking using Cu Through Silicon Vias (TSV), which is inserted between contact and M1 of their reference 0.13 mum CMOS process on 200 mm wafers.
168
Patent
Fabrication of porogen residues free and mechanically robust low-k materials
Adam Urbanowicz,Patrick Verdonck,Denis Shamiryan,Kris Vanstreels,Mikhail R. Baklanov,Stefan De Gendt +5 more
- 07 Jul 2010
TL;DR: In this article, a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa is presented.
161
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
Benjamin Groven,Markus Heyne,Ankit Nalin Mehta,Hugo Bender,Thomas Nuytten,Johan Meersschaut,Thierry Conard,Patrick Verdonck,Sven Van Elshocht,Wilfried Vandervorst,Stefan De Gendt,Marc Heyns,Iuliana Radu,Matty Caymax,Annelies Delabie +14 more
TL;DR: In this article, a low temperature plasma-enhanced atomic layer deposition (PEALD) process for 2D transition metal dichalcogenides is presented, based on a ternary reaction cycle consisting of consecutive WF6, H2 plasma, and H2S reactions.
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Benjamin Groven,Ankit Nalin Mehta,Hugo Bender,Johan Meersschaut,Thomas Nuytten,Patrick Verdonck,Thierry Conard,Quentin Smets,Tom Schram,Ben Schoenaers,Andre Stesmans,Valeri Afanasʼev,Wilfried Vandervorst,Marc Heyns,Matty Caymax,Iuliana Radu,Annelies Delabie +16 more
TL;DR: In this article, a qualitative model for the WS2 nucleation behavior on dielectric surfaces during plasma-enhanced (PE-) ALD using tungsten hexafluoride (WF6), dihydrogen (H2) plasma and Dihydrogen sulfide (H 2S) was proposed.