Patrick Sims
Arizona State University
20 Papers
45 Citations
Patrick Sims is an academic researcher from Arizona State University. The author has contributed to research in topics: Chemical vapor deposition & Doping. The author has an hindex of 6, co-authored 20 publications.
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Papers
Ultralow Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane.
TL;DR: The nonconventional deuterated stibine (SbD3) compound has been used for the first time in combination with trigermane to produce hyper-doped Ge-on-Si films with carrier concentrations n > 10(20) cm(-3) and record-low resistivities ρ = 1.8 × 10(-4) Ω cm.
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Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: synthesis, electrical performance and optical behavior
TL;DR: In this paper, P(SiH3)3, Ge3H8 and Ge4H10 were used to synthesize n-type Si-Si-N-type films for next-generation CMOS technologies.
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In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes
Chi Xu,James Gallagher,Patrick M. Wallace,C. L. Senaratne,Patrick Sims,Jose Menendez,John Kouvetakis +6 more
TL;DR: In this article, a new method was proposed to achieve very high carrier densities in As-doped germanium using ultra-low temperature, high efficiency routes based on the structurally and chemically compatible inorganic hydrides As(SiH3)3 and As(GeH 3)3.
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Crystalline (Al1-xBx)PSi3 and (Al1-xBx)AsSi3 tetrahedral phases via reactions of Al(BH4)3 and M(SiH3)3 (M = P, As)
Patrick Sims,Toshihiro Aoki,Ruben Favaro,Patrick M. Wallace,Andrew Edward White,Chi Xu,Jose Menendez,John Kouvetakis +7 more
TL;DR: In this paper, lattice-matching on Si(100) substrates by reactions of P(SiH3)3 and Al(BH4)3 using low pressure CVD is described.
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Nanoscale assembly of silicon-like [Al(As 1 − x N x )] y Si 5 − 2 y alloys: Fundamental theoretical and experimental studies of structural and optical properties
L. Jiang,Patrick Sims,Gordon Grzybowski,Richard T. Beeler,Andrew Chizmeshya,David J. Smith,John Kouvetakis,Jose Menendez +7 more
TL;DR: In this paper, theoretical simulations of Al(As{1\ensuremath{-}x}$N${}_{3}$)Si-Si alloys, a new class of optoelectronic materials, confirm that these compounds are likely to be disordered via a mechanism that preserves the integrity of the constituent III-V-Si${}-Si, but randomizes their orientation in the average diamond lattice of the compound.
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