Patrick Maloney
United States Department of the Army
12 Papers
70 Citations
Patrick Maloney is an academic researcher from United States Department of the Army. The author has contributed to research in topics: Dark current & Carrier lifetime. The author has an hindex of 7, co-authored 12 publications.
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Papers
Emissivity of microstructured silicon.
TL;DR: Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range.
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Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb
Neil F. Baril,Alex Brown,Patrick Maloney,Meimei Z. Tidrow,Dmitri Lubyshev,Yueming Qui,Joel M. Fastenau,Amy W. K. Liu,Sumith V. Bandara +8 more
TL;DR: In this article, a mid-wavelength infrared nBn photodetectors based on bulk InAsxSb1-x absorbers with a greater than 5μm cutoff grown on GaSb substrates are demonstrated.
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Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials
TL;DR: In this article, the minority carrier lifetime of T2SL-based Type-II Superlattice (T2SL) detectors with various background doping densities was analyzed.
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Performance of InAs/GaSb superlattice infrared detectors and dependence on minority carrier lifetime
TL;DR: In this paper, the desired quantum efficiency and dark current density of type-II strained-layer superlattice detectors (T2SLS), and required read-noise levels for long-wavelength infrared (LWIR) imaging applications at various background levels were discussed.
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Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures
TL;DR: In this article, the minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates.
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