Characteristics of low-κ SiOC films deposited via atomic layer deposition

The pore sizes of hydrogen-methyl-siloxane-based porous spin-on-glass (SOG) thin films having different k values (k=1.8–2.5) are comparatively studied using different nondestructive instrumental ways and also with reference to sorption porosimetry. The pore size and its spread are found to increase with increasing porosity, or with decreasing dielectric constant.

Comparative Study of Pore Size of Low-Dielectric-Constant Porous Spin-on-Glass Films Using Different Methods of Nondestructive Instrumentation : Semiconductors

Atomic layer deposition HfO2 capping layer effect on porous low dielectric constant materials

Determination of the Model for the Chemical Structure of Porous PECVD Low-k Films

This work proposes a new method for improving the characteristics of porous low-k dielectric film by capping it with an HfO 2 film by atomic layer deposition (ALD). Experimental results revealed that capping a porous low-k dielectric film with a ∼1.0 nm-thick HfO 2 film increases its dielectric constant from 2.56 to 2.65 because the pores in the surface of the film are sealed by Hf precursors. The leakage current density and reliability of the porous low-k dielectrics are greatly improved. The HfO 2 capping film also increased resistances against Cu diffusion and damage by oxygen plasma. Therefore, this ALD-deposited HfO 2 capping film can be used as a pore-sealing layer and a Cu barrier layer for the porous low-k dielectric film in the future advanced technologies.

Electrical and reliability performance of atomic layer deposition HfO 2 capping layer on porous low dielectric constant materials

The Effects of Plasma Treatments and Subsequent Atomic Layer Deposition on the Pore Structure of a k=2.0 Low-k Material

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The Effects of Plasma Treatments and Subsequent Atomic Layer Deposition on the Pore Structure of a k=2.0 Low-k Material