P. Zaumseil
6 Papers
58 Citations
P. Zaumseil is an academic researcher. The author has contributed to research in topics: Silicon & Dislocation. The author has an hindex of 5, co-authored 6 publications.
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Papers
Interaction between point defects and dislocation loops as the phenomenon able to reduce anomalous diffusion of phosphorus implanted in silicon
TL;DR: In this paper, triplecrystal x-ray diffraction and junction depth measurements combined with secondary ion mass spectrometry were used for the analysis of implant defects and the determination of P distribution, respectively.
27
Defect distribution in ion implanted silicon: comparison between Monte Carlo simulation and triple crystal X-ray measurements
TL;DR: In this paper, a Monte Carlo simulation in self-ion implanted silicon is compared with lattice strain profiles deduced by triple crystal X-ray rocking curves, which are obtained by a triple crystal lattice simulator.
18
Structural and Electrical Characterization of Boron Implanted in Preamorphized Silicon Layers
TL;DR: In this article, low energy boron ions are implanted in silicon substrates, preamorphized by self-ion bombardment, and the X-ray rocking curves obtained by (n, n, n) triple crystal geometry from the annealed samples are simulated through application of the dynamical theory of diffraction from imperfect crystals.
11
Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon
M. Servidori,F. Cembali,R. Fabbri,E. Gabilli,P. Negrini,Sandro Solmi,P. Zaumseil,U. Winter,M. Anderle,Roberto Canteri +9 more
TL;DR: In this paper, triple-crystal X-ray diffraction and secondary ion mass spectrometry were used for the analysis of implant defects and determination of P distribution, respectively.
5
Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials
TL;DR: In this article, the influence of lattice defects induced by silicon implantation on the B, P, As, and Sb diffusivities was investigated after annealing between 700 and 900 degrees C. The authors determined the depth position of the residual implantation defects in undoped samples by the analysis of the rocking curves obtained by triple crystal x-ray diffraction and transmission electron microscopy.