P. Wiklund
Ericsson
2 Papers
32 Citations
P. Wiklund is an academic researcher from Ericsson. The author has contributed to research in topics: Plasma etching & Electrical measurements. The author has an hindex of 2, co-authored 2 publications.
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Papers
Limitation of Ti/TiN diffusion barrier layers in silicon technology
TL;DR: In this article, the authors examined the usefulness of low resistive contacts and diffusion barriers between doped silicon and aluminium and concluded that RBS, commonly used in the study of diffusion barrier properties, gives optimistic information on the upper limit of the metallurgical stability of the barrier layers.
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Observation of anomalous high resistance to implanted areas caused by reactive ion etching (RIE)
TL;DR: In this article, a reactive ion etch (RIE) was performed in an hexode etcher using CHF 3, O 2 gas mixture at 50 mtorr.
3