Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore’s law (i.e. More Moore) and More than Moore scaling. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0051501jss] All rights reserved.

https://iopscience.iop.org/article/10.1149/2.0051501jss/pdf

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

JSS FOCUS ISSUE ON ADVANCED INTERCONNECTS :M ATERIALS ,P ROCESSING, AND RELIABILITY Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films

For engineering applications, hardness must be complimented with high toughness for applications where high contact loads are there. A good combination of hardness, toughness and low coefficient of friction can be achieved, by suitable tailoring of microstructures of coating in hard nanocomposite coatings. Tribologocal applications require hard coatings with tailored functionalities for different applications; hard nanocomposite coatings are potential materials for such applications. Ti and amorphous carbon based systems have shown more promising material. The present review discusses the nanocomposite hard coatings, mechanism of enhancement of toughness, multilayer hard nanocomposite coatings. Here, mainly Ti and Si based nanocomposite has been discussed as carbon based reviews are available in plenty in literature and well documented. Ti-B-N, Ti-Si-B-C, Ti-Si-B-C-N, Si-C-N, Ti-Al-N, Ti-Al-Si-N, Al-Si-N, Ti-Cr-Al-N, Zr-Si-N and some other similar system nanocomposite hard coatings are important where the gradual and intelligent additions of different elements in hard single component phase provides the combination of hardness, toughness and low coefficient of friction. Some of these systems are discussed. In the end, the future directions of research, Technology„ which are required to achieve tough nanocomposite hard coatings for actual applications are also highlighted.

/pdf/toughening-of-nanocomposite-hard-coatings-2d0dbhyzzl.pdf

Toughening of nanocomposite hard coatings

In this contribution, we present sealed ultra low-k organosilica films that have improved electrical, mechanical and chemical properties. The films consist of a mesoporous ethylene-bridged organosilica layer at the bottom and an almost non-porous cyclic carbon-bridged top layer. This top layer effectively seals metal penetration during atomic layer deposition processes. Furthermore, by applying this sealing approach we can lower the dielectric constant of the pristine mesoporous film from 2.5 to 2.07 while we can also lower the leakage current and improve the mechanical and chemical stability.

Sealed ultra low-k organosilica films with improved electrical, mechanical and chemical properties

Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

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Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration