The absolute thermoelectric power of the Pd82Si18 and Pd80Si20 metallic glasses has been measured at 1.8-8.5K using a SQUID. The thermopower of Pd82Si18 becomes negative below about 7.7K. This anomaly has been attributed to scattering at magnetic impurities present in the sample. Their negative contribution to the thermopower prevails at sufficiently low temperatures over a positive one from the PdSi matrix. The results for two glasses Pd80Si20 of different purity support this conclusion.

Kondo effect in the thermopower of amorphous PdSi

Low temperature thermal conductivity of amorphous alloys FexNi80−xB20(x = 40, 50, 60, 70) is measured in the range T = 2 to 30 K. For all the samples the phonon part of thermal conductivity Kph(T) tends to a plateau at T ⪆ 15 K. The magnitude of Kph(T) is found to decrease systematically with increasing content of Fe ions in the alloy. Possible contributions to Kph(T) are discussed and a structural origin is suggested for both the plateau and the concentration dependence of Kph(T). In terms of the model of Chen and Wu, the plateau results from a temperatare dependence of the density of states of TLS, while the concentration dependence of Kph(T) implies a stronger coupling between phonons and TLS in samples with higher Fe content.



Die Warmeleitfahigkeit amorpher metallischer Legierungen FexNi80−xB20(x = 40, 50, 60, 70) wird im Temperaturbereich von 2 bis 30 K gemessen. Der Beitrag Kph(T) der Phononen zur Warmeleitfahigkeit weist in allen Legierungen ein Plateau bei T ⪆ 15 K auf. Die Grose von Kph(T) sinkt systematisch bei einem Anwachsen der Konzentration von Fe in der Legierung. Mogliche Beitrage zu Kph(T) werden diskutiert und es wird vorgeschlagen, das die Ergebnisse im Rahmen des theoretisehen Modells von Chen und Wu interpretiert werden konnen.

Low temperature thermal conductivity of metallic glasses FexNi80−xB20

Magnetic contribution to low temperature thermal conductivity of amorphous ferromagnets FexNi80−xB20

It is well known that any distributive poset (short for partially ordered set) has an isomorphic representation as a poset (Q, ⊆) such that the supremum and the infimum of any finite setF ofP correspond, respectively to the union and intersection of the images of the elements ofF. Here necessary and sufficient conditions are given for similar isomophic representation of a poset where however the supremum and infimum of also infinite subsetsI correspond to the union and intersection of images of elements ofI.

On the representation of partially ordered sets

In situ X-ray reflectometry, grazing-incidence X-ray absorption spectroscopy and simultaneous electrical resistivity measurements were used to investigate the microstructure of (5.9±0.1) nm thick bismuth films quench condensed at (20±1) K onto float-glass substrates. A subsequent annealing process induces an irreversible transformation of the film structure from an amorphous to a highly disordered nanocrystalline structure above (42±2) K. This transformation is accompanied by an irreversible increase of the film resistivity by a factor of more than 2.7. Different negative temperature coefficients of resistance were found directly after deposition and after the annealing process. No changes of the film density, which is always less than the density of the bulk material, or of the film roughness, are observed as a result of the heat treatment.

In situ surface-sensitive X-ray investigations of thin quench condensed bismuth films

A method has been developed for the simultaneous measurement of several different transport coefficients on a sample. Experiments were performed on a Bi single crystal at temperatures 1·5–50 K. Six transport properties were measured, including the electrical resistivity, thermal conductivity and thermopower. A set of quantities related to transport integrals of the phenomenological transport theory has been determined from experimental data. All the possible transport coefficients can be calculated from them. The possibilities of the determination from experiments of the full tensorial transport integrals for an anisotropic material like Bi are discussed.

Experimental determination of the transport coefficients of bismuth in the range 1·5–50 K

On the single crystals growth of Bi-Sr-Ca-Cu-O superconductors

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Experimental determination of the transport coefficients of bismuth in the range 1·5–50 K

On the single crystals growth of Bi-Sr-Ca-Cu-O superconductors