We report on a card-to-card optical interconnect demonstrator with passively aligned butt-coupled optoelectronic modules onto waveguides embedded into the printed circuit board (PCB). After describing selected building blocks, we will present experimental results obtained with the demonstrator hardware consisting of a parallel 12-channel at 10 Gb/s (120 Gb/s) optical card-to-card link.

120 Gb/s Optical Card-to-Card Interconnect Link Demonstrator with Embedded Waveguides

Singlemode 1.28 µm InGaAs VCSELs, with a higher-order mode suppression >30 dB in the temperature range 25–85°C, have been fabricated using an inverted surface relief technique for relaxed fabrication tolerances. High performance 2.5 and 10 Gbit/s modulation is demonstrated in the same temperature range.

High speed, high temperature operation of 1.28 um singlemode InGaAs VCSELs

One embodiment of the present invention provides a system that automatically detects and corrects a misalignment of a semiconductor chip. During operation, the system uses a position-detection mechanism integrated with the chip to determine the misalignment of the chip from a desired alignment for the chip. Next, the system uses an actuation mechanism integrated with the chip to automatically correct the misalignment, thereby improving performance and reliability of the chip.

Method and apparatus for automatically detecting and correcting misalignment of a semiconductor chip

Compound semiconductors provide state-of-the-art performance in optoelectronics, while silicon-on-insulator (SOI) is an ideal platform for many passive functions in integrated optics. By combining them one can realise optical devices with high performance and low cost. This paper discusses the various applications and technologies for integrating InP chips with SOI waveguides. Bonding of lasers, SOA arrays and detectors for practical applications is described. Experimental results are given for visually aligned thermo-compression bonding and self-aligned flip-chip bonding with Indium bumps. Flip-chip bonding is reported directly on SOI chips, as well as on a separate silicon-optical-bench.

Integration of InP-based optoelectronics with silicon waveguides

In this article, developments and techniques related to optical-fiber-coupled devices operating at cryogenic temperatures are reviewed. These devices include superconducting electronics and photodetectors. Superconducting circuits have a number of suitable characteristics in terms of speed and efficiency, lower power consumption, and traceability to fundamental quantum properties. Thus, applications are found in a number of technologies, such as communication and metrology. Often, the devices are coupled by an optical fiber link to an external source. A suitable design of the optical coupling at cryogenic temperatures entails considerations of electromagnetic behavior, geometry, components, material choices, and customized packaging schemes. Minimizing thermomechanical stresses and deformation is a challenge due to the extreme temperature span, from room temperature to below 10 K. Due to the thermomechanical properties at low temperatures, with high contraction and brittleness of some materials, careful d...

Review of Devices, Packaging, and Materials for Cryogenic Optoelectronics

In order to fit with the present and future needs of the Datacom transceiver market, newly designed high rate transmitter optical subassemblies (TOSAs) have to be compact, low cost and compatible with mass production. We propose here an innovative design strategy that reaches all these targets by integrating a 10Gbps 850nm VCSEL laser diode and its laser driver with other functionalities (e.g. power monitoring and thermal monitoring) in a small form factor package. Taking advantages of the optical properties of the VCSEL and using flip-chip techniques, the transmitter exhibits excellent hyperfrequency performances and compatibility with mass production due to the use of collective manufacturing technologies and passive optical alignment. This versatile approach is also applicable to high rate receivers, parallel optics emitters, and singlemode low cost transmitter integrating long wavelength VCSELs.

Highly integrated VCSEL-based 10Gb/s miniature optical sub-assembly

We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes".

Experimental Study of the Lasing Modes of 1.3- $\mu$ m Highly Strained InGaAs–GaAs Quantum-Well Oxide-Confined VCSELs

Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desirable as low-cost sources for optical metropolitan-area and access networks. In the development of 1.3-µm VCSELs, most attention today is given to monolithic GaAs-based solutions, although no established active material exists in this wavelength region. This thesis investigates the possibility of reaching the 1.3-µm telecom wavelength window using GaInNAs quantum wells (QWs) or 1.2-µm InGaAs QWs in conjunction with negative gain-cavity detuning in VCSELs. The work includes metal-organic vapor-phase epitaxy and characterization of InGaAs and GaInNAs QWs, realization of 1.3-µm InGaAs VCSELs as well as elements of optimization and analysis of such lasers. The evaluation of GaInNAs and InGaAs QWs has been performed using a number of characterization methods such as photoluminescence (PL), high-resolution x-ray diffraction, secondary-ion mass spectroscopy, and atomic-force microscopy as well as fabrication and evaluation of broad-area lasers (BALs). Both performance and growth reproducibility of GaInNAs QWs are considered and could be improved by using high V/III ratios. Nontrivial relations between PL and laser performance are pointed out and the technologically important but problematic combination of AlGaAs and GaInNAs in the same epitaxial structure is studied. Parallel to the work on GaInNAs, the possibility of extending the wavelength of InGaAs QWs towards 1.3 µm has been investigated. Generally better luminescence efficiency and laser performance are obtained for InGaAs than for GaInNAs QWs, but the gain-peak wavelength for InGaAs QWs is presently limited to about 1.24 µm due to strain-induced degradation. In this work the InGaAs QW growth is optimized for long wavelength and high luminescence. It is demonstrated that multiple QW structures can be grown with strain similar to that of single QWs, which is interesting for VCSEL applications. Record BALs with two to five InGaAs/GaAs QWs have low threshold current densities,  70 A/cm2 per QW at 1.24 µm. The main advantage of InGaAs QWs compared to GaInNAs QWs is that they represent a better-known material system with less complex and more stable growth. However, InGaAs QWs > 1.2 µm are on the verge of strain relaxation, and the possible consequences for laser production and reliability have to be considered. Using 1.2-µm InGaAs QWs, high-performance 1.3-µm VCSELs were achieved by negative gain-cavity detuning. Dynamic performance and surface reliefs to improve the single-mode operation have been investigated. The VCSELs have excellent high-temperature performance due to a smaller spectral distance between the gain-peak and the laser mode at elevated temperature. More specifically, a 1.27-µm single-mode device showed maximum output powers of 1.1 and 0.5 mW at 20 and 140oC, which is state-of-the-art for GaAs-based long-wavelength VCSELs. In all, two methods for 1.3-µm GaAs-based VCSELs, GaInNAs and InGaAs QWs, have been investigated. GaInNAs is a difficult material but is still promising and several companies have predicted a near-future market introduction. However, the growth of GaInNAs is both complex and sensitive to growth fluctuations. On the other hand, gain-cavity detuned InGaAs-QW VCSELs show state-of-the-art performance at 1260-1290 nm with straightforward growth and processing. The devices exhibit good static and dynamic performance, and preliminary reliability tests indicate that there is no intrinsic problem. Both approaches are promising for application in real-world optical networks and deserve further attention.

Optimization of highly strained InGaAs quantum wells for 1.3-µm vertical-cavity lasers

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Highly integrated VCSEL-based 10Gb/s miniature optical sub-assembly

Experimental Study of the Lasing Modes of 1.3- $\mu$ m Highly Strained InGaAs–GaAs Quantum-Well Oxide-Confined VCSELs

Optimization of highly strained InGaAs quantum wells for 1.3-µm vertical-cavity lasers