Thin functional films were deposited on aluminum with an atmospheric pressure plasma jet using hexamethyldisiloxane (HMDSO) as precursor. A high dynamic deposition rate on the order of 450 nm · m · min -1 was achieved. Composition and structure of the thin films show a strong dependence on the downstream location of the precursor injection. A 4 mm downstream shift of the precursor injection increases the carbon content in the thin film by a factor of 2.5, as indicated by XPS analysis and alters the degree of cross-linking according to the FTIR spectra. The coating with the low carbon content (17 at.-%) provides corrosion resistance for aluminum 2024 unclad exposed for 96 h to a neutral salt spray test. The coating with the high carbon content reduces the adhesion of an epoxy resin to the surface and may be used as a release coating.

Plasma Polymerization of HMDSO with an Atmospheric Pressure Plasma Jet for Corrosion Protection of Aluminum and Low‐Adhesion Surfaces

This review gives an overview of the characteristics of various non-thermal, non-equilibrium plasmas and discusses applications of AP-PECVD with dielectric barrier discharges, corona discharges, RF discharges, and microwave discharges.

Chemical Vapor Deposition Enhanced by Atmospheric Pressure Non‐thermal Non‐equilibrium Plasmas

Production of ultrafine atmospheric pressure plasma jet with nano-capillary

Semiconducting crystalline Co3O4 thin films were deposited on glass, stainless steel and Si substrates using three different PVD methods: (i) RF magnetron sputtering, (ii) high-power impulse magnetron sputtering (HiPIMS), and (iii) hollow cathode discharge (HCD). All layers were sputtered from pure cobalt target (or nozzle) in reactive atmosphere and post-annealed on air. Properties of deposited layers have been studied and discussed with respect to their potential applications. The surface morphology of the films was analyzed by SEM, their crystalline structure by XRD and Raman spectroscopy, chemical composition by EDS, electrical properties by Van der Pauw method and the specific surface area was measured by standard BET analysis. The layers prepared by the hollow cathode discharge compared to the magnetron-prepared films exhibited higher porosity, higher resistivity, higher activation energy, and higher deposition rate during the sputtering process.

Co3O4 thin films prepared by hollow cathode discharge

We report on the effect of over∼underestimation of the plasma potential by the strongly emitting probe technique in the low temperature plasma due to the effect of the space charge of the emitted electrons; experimental data are compared with theoretical model. Further we studied the electron saturation current variations at varying probe heating and we found them to be closely related to the probe wire contamination. The study was performed in two types of low temeperature argon plasma—weakly magnetized plasma of the cylindrical magnetron and the hollow cathode plasma jet showing different trends.

Emissive probe diagnostics in low temperature plasma—effect of the space charge and variations of the electron saturation current

RF and DC plasma jet sputtering systems were investigated as sources for deposition of ZnO thin films. Deposited zone films have a strong orientation of hexagonal crystallites with the ‘ c ’ axis perpendicular to the substrate surface. Temperature of the substrate did not exceed 150 °C during the deposition. Langmuir probe measurement performed at the substrate revealed two groups of electrons with different temperatures in the DC plasma jet. A single group of electrons was found in the RF plasma jet system. Electron concentration in the RF jet was found to be about n eRF ≈5×10 9 –10 10 cm −3 with temperature T eRF ≈2.5–3.5 eV. In the DC plasma jet, concentration of cold electrons was usually n ec ≈10 9 cm −3 with temperature T ec ≈0.5 eV and concentration of hot electrons was n eh ≈10 8 cm −3 with temperature T eh ≈2–3.5 eV. Photographs also confirmed that the plasma density is higher in the position of the substrate in the RF jet than in the DC jet. Other obtained macroscopic parameters as plasma potential and floating potential relative to the grounded reactor are presented.

Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films

Barrier torch discharge was used for low temperature deposition of In x O y and SnO x thin films at atmospheric pressure on polymer substrates. Vapors of Sn- and In-acetylacetonat were used as growth precursors for the deposition process of SnO x and In x O y thin films. Transparent films of conductivity σ SnO ≈10 S/cm for SnO x and σ InO ≈10 2 S/cm for In x O y were deposited on polymer substrates under conditions when the atmospheric plasma jet directly interacted with the polymer substrate. Plasma jet excitation had to be pulse modulated in order to avoid thermal damages of the polymer substrate. SnO x and In x O y were also deposited in a different discharge mode, in which interaction of the light emitting plasma jet with the substrate did not directly occur. In this case, the films had pure adhesion and had electrical conductivity lower than σ −3 S/cm. The analysis by an electron microprobe system has shown that the films had chemical composition close to SnO 2 and In 2 O 3 , respectively. XRD diffraction did not confirm any crystalline phase in all the deposited samples.

Deposition of InxOy and SnOx thin films on polymer substrate by means of atmospheric barrier-torch discharge

The RF plasma jet system was investigated as a source for the sputtered deposition of LiCoOx thin films. As preliminary results of experiments, LiCoOx films with hexagonal high temperature structure were deposited. The RF hollow cathode in the shape of the cylindrical nozzle was sintered from powder of LiCoO2. This hollow cathode was reactively sputtered in Ar+O2. Plasma jet parameters were investigated during the sputtering process by a Langmuir probe system in the position of the substrate. The electron energy distribution function (EEDF) deviated from the Maxwellian distribution mainly in the energetic range below 5 eV. For higher energies above this value, the EEDF could be approximated with a Maxwellian fit in the limited interval of energies. Obtained electron concentrations were in the range ne=109–6×1010 cm−3 and were strongly dependent on the magnitude of the applied RF power PRF. Electron temperature Teh describing only the limited energy part of EEDF was calculated from this Maxwellian fit and the dependence of Teh on PRF is discussed. Besides XRD, deposited films were investigated by electron microprobe system, scanning electron microscopy and cyclic voltammetry.

Investigation of the RF plasma jet system for deposition of LiCoOx thin films

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Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films

Deposition of InxOy and SnOx thin films on polymer substrate by means of atmospheric barrier-torch discharge

Investigation of the RF plasma jet system for deposition of LiCoOx thin films