The reliability of 600 V GaN power switches, fabricated in a silicon CMOS foundry, has been demonstrated. JEDEC qualification of cascode packages and the long term reliability of GaN power switches has been estimated for the first and shown to be greater than a million hours. Excellent switched/dynamic on-resistance up to 1000 V and breakdown voltage over 1500 V indicate the suitability of these devices for switching up to 480 V. Detailed data of high temperature reverse bias (HTRB) test is shown. High temperature DC stress test and high voltage off-state stress tests also corroborate the high reliability of these devices. This suite of initial, JEDEC & accelerated stress tests show that GaN-on-silicon power switches are ready for many commercial and industrial applications, would significantly reduce switching losses and system size and will impact all areas of electricity conversion, ranging from tablet chargers to photovoltaic inverters and electric vehicles.

Commercialization and reliability of 600 V GaN power switches

Manufacturing readiness of the world's first highly reliable 650V GaN HEMT is demonstrated with high process capability (CpK>1.6) for leakage and on resistance. This technology was developed in a Si-CMOS compatible 6-inch foundry and has been demonstrated with over one thousand wafers worth of data spread over two generations of technology nodes covering multiple products and packages collected during ramp up post qualification. Silicon manufacturing processes are employed including gold-free processes that avoid the use of evaporation/liftoff typical to compound semiconductors. Probe yield and Line yield for the GaN process now matches mature Si-CMOS process running in the same fabrication facility. Extended qualification results beyond JEDEC standard are also shown for GaN products for the first time. Products in cascode configuration were tested. Wide bandgap high speed and high voltage GaN devices significantly reduce the system size and improve energy efficiency of power conversion in all areas of electricity conversion, ranging from PV inverters to electric vehicles making the above results significant and making GaN high volume production a reality.

650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control

A series of AlN/GaN heterostructures were grown on 6-inch Si substrate by metal organic chemical vapor deposition (MOCVD). Different cap layer structures, including gallium nitride (GaN) and silicon nitride (SiNx), were used to passivate the heterostructure surface. A 3.5 nm thick SiNx cap is able to maintain the two dimensional electron gas (2DEG) stability in long period. An AlN/GaN heterostructure with 4.5 nm thick AlN barrier exhibits the best 2DEG properties, in terms of sheet resistance, carrier mobility and stability. It has been found that the carrier mobility of the 2DEG can be enhanced by a combination of SiNx and GaN cap layers to over 1400 cm2/V.s.

https://iopscience.iop.org/article/10.1088/2053-1591/ab96f5/pdf

Effects of the cap layer on the properties of AlN barrier HEMT grown on 6-inch Si(111) substrate

Gallium Nitride (GaN) is now a popular choice for power conversion. High voltage (HV) GaN HEMTs (GaN FETs) in the range of 650–900 volts are emerging as the next standard for power conversion. This paper highlights key successes in efficient and compact converters/inverters ranging from high performance gaming/crypto-mining power supplies, titanium class server power, servo drives, PV inverters, and automotive OBCs, dc-dc converters, pole charges. The reasons for market success including unmatched quality & reliability, high volume GaN on Si manufacturing, robust performance in applications as well as challenges to achieve the full potential of GaN FETs are presented.

GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges

A GaN-based power device is a superior component for high-frequency and high-efficiency applications and especially for applications that involve megahertz power conversion. In this work, a fast process of static thermal resistance (R
 th) and transient thermal impedance (Z
 th) measurements are made and analyzed to determine the thermal characteristics of the channel temperature of a hermetically packaged GaN power device. Five temperature-sensitive parameters (TSPs) are measured at temperatures from 20 to 160 °C. Measurements and statistical analyses included variations with temperature of on-resistance (R
 on), saturation drain current (I
 Dsat), drain conductance (g
 d), threshold voltage (V
 th), and knee voltage (V
 knee). The statistical analyses revealed the relationships between the heating curve parameter (R
 on) and the cooling curve parameters (V
 knee, I
 Dsat, g
 d, and V
 th). The average thermal resistance values are extracted as follows: Maximum R
 th is 2.99 °C W−1, minimum R
 th is 2.92 °C W−1, and the variation among the five TSPs is <3%. Conventional optical-based techniques such as infrared (IR) and micro-Raman thermography are destructive to packaged devices. Therefore, this study developed the two reliable and fast non-destructive methods for estimating channel temperature with the following features: (1) They elucidate static and transient characteristics; (2) they involve heating and cooling; and (3) they evaluate transient thermal impedance (TTI) and safe operating area (SOA). The heating curve method has advantages over cooling curve method in terms of capturing time (40 vs. 400 s, respectively), and a lower power excitation is required to obtain the transient channel temperature response.

Channel temperature measurement in hermetic packaged GaN HEMTs power switch using fast static and transient thermal methods

Commercialization of 600V GaN HEMTs

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Commercialization of 600V GaN HEMTs