Several industrial applications require specific electronic systems installed in harsh environments to perform measurements, monitoring, and control tasks such as in space exploration, aerospace missions, automotive industries, down-hole oil and gas industry, and geothermal power plants. The extreme environment could be surrounding high-, low-, and wide-range temperature, intense radiation, or even a combination of above conditions. We review, in this paper, the main leading applications that demand advanced technologies to fit the unconventional requirements of extreme operating conditions, discussing their main merits and limits compared to established and emerging technologies in this field, including silicon (Si), silicon on insulator (SOI), silicon germanium (SiGe), silicon carbide (SiC) as well as III–V semiconductors particularly the gallium nitride (GaN) semiconductor. In spite of successfully exceeding extreme conditions borders by developing advanced semiconductor devices dedicated for harsh environments, especially in high-temperature applications, the packaging challenges are still limiting the reliability of the developed technologies. Those challenges are examined in this review in terms of limitations and proposed solutions.

Electronics and Packaging Intended for Emerging Harsh Environment Applications: A Review

A high gamma radiation hardness of 4H-SiC circuits is performed. The OR NOR circuits are based on emitter coupled logic (ECL), using integrated bipolar NPN transistors. Gain degradation in individual bipolar junction transistors (BJT) is minimal up to a dose of 38 Mrad (SiO2), but for the dose of 332 Mrad (SiO2) a degradation of 52% is observed. The SiC BJTs show higher radiation hardness than existing Si-technology and high stability under temperature stress. It is proposed that the oxide charge-dominated recombination is the key base current recombination mechanism contributing to gain degradation. An improvement in the gain is seen after annealing at 400 °C for 1800 s due to the possible annealing of some of the oxide defects contributing to the oxide charge.

/pdf/high-gamma-ray-tolerance-for-4h-sic-bipolar-circuits-ddp22e4kle.pdf

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

60Co gamma radiation total ionizing dose combined with conducted electromagnetic interference studies in BJTs

The effects of 5 MeV proton irradiation on ON-state characteristics of 1200 V 4H-SiC VDMOSFETs are investigated in this paper, and related mechanisms have been revealed by the analysis of their test structure of ohmic contacts, lateral nMOSFETs and MOS capacitors simultaneously fabricated on same wafer. The results show that the threshold voltage (V
 TH
) decreases obviously with increasing irradiation doses because the dominant hole traps induced by nitrogen passivation might capture more holes produced by the ionization effect of proton irradiation, resulting in the generation of net positive charges nearby the SiO
 2
/4H-SiC interface. The interface trap density (Dit) extracted by subthreshold swing increases but field effective mobility (μ
 FE
) is improved with increasing irradiation doses. The un-trapped near interface electron traps (NIETs) are reduced by the ionization effect of proton irradiation, which could be beneficial to the improvement of μ
 FE
. And after the maximum irradiation dose of 1 × 10
 14
 p/cm
 2
 the VDMOSFET fails in the ON-state capability. Before it fails, the ON-state resistivity (R
 ON
) firstly decreases and then increases with the increase of irradiation dose. The deterioration of the resistance of lightly doped drift region (R
 D
) and the resistance of JFET region (R
 JFET
) caused by the displacement effect of proton irradiation covers up the improvement of the channel resistance (R
 CH
) with increasing irradiation doses, finally leading to the failure of the VDMOSFET at the maximum proton irradiation dose.

/pdf/effects-of-5-mev-proton-irradiation-on-1200-v-4h-sic-2x6nj7jsy5.pdf

Effects of 5 MeV Proton Irradiation on 1200 V 4H-SiC VDMOSFETs ON-State Characteristics

The effect of irradiation with 15 MeV protons on the electrical properties of high-power vertical 4H-SiC MOSFETs of 1.2 kV class has been studied experimentally with doses in the range 0 ≤ Φ ≤ 1014 cm−2. Dose Φcr, signifying the complete degradation of the device, corresponds to the condition Φcr ≈ n 0/η e (η e is the electron removal rate and n 0 is the electron concentration in the unirradiated drift layer). In the devices under study, Φcr is 1014 cm−2. The effect of irradiation on the leakage current, gate-drain capacitance, transconductance, and field mobility was examined.

https://iopscience.iop.org/article/10.1088/1361-6641/ab0590/pdf

Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs

The impact of proton and electron irradiations on the electrical parameters of 4H-SiC nMOSFETs has been investigated by the time bias stress instability method. This study has allowed observing the effect of holes trapped in the gate oxide together with the generated interface traps. Improvements of important electrical parameters, such as the threshold voltage, the effective mobility and the maximum drain current were observed. These improvements could be connected with the Nitrogen and residual Hydrogen atoms diffusion from SiO
 2
/SiC the interface toward the epilayer during irradiation. These atoms are likely to create other bonds by occupying the Silicon and Carbon's dangling bond vacancies. This way, the number of passivated Carbon atoms is increased, hence improving the SiO
 2
/SiC interface quality.

5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

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5 MeV proton and 15 MeV electron radiation effects study on 4H-SiC nMOSFET electrical parameters

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments