5 Papers
10 Citations
P. Kulse is an academic researcher from Leibniz Institute for Neurobiology. The author has contributed to research in topics: Responsivity & Photodiode. The author has an hindex of 2, co-authored 3 publications.
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Papers
SiGe HBT with fx/fmax of 505 GHz/720 GHz
Bernd Heinemann,Holger Rucker,R. Barth,F. Barwolf,J. Drews,Gunter Fischer,A. Fox,O. Fursenko,Thomas Grabolla,Frank Herzel,Jens Katzer,J. Korn,A. Kruger,P. Kulse,T. Lenke,Marco Lisker,Steffen Marschmeyer,A. Scheit,D. Schmidt,J. Schmidt,M. A. Schubert,Andreas Trusch,C. Wipf,D. Wolansky +23 more
- 01 Dec 2016
TL;DR: An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented in this article.
193
Ge Photodiode with -3 dB OE Bandwidth of 110 GHz for PIC and ePIC Platforms
Stefan Lischke,Anna Peczek,F. Korndorfer,Christian Mai,H. Haisch,M. Koenigsmann,M. Rudisile,Daniel Steckler,F. Goetz,Mirko Fraschke,Steffen Marschmeyer,A. Kruger,Yuji Yamamoto,D. Schmidt,U. Saarow,P. Heinrich,A. Kroh,M. A. Schubert,Jens Katzer,P. Kulse,A. Trusch,Lars Zimmermann +21 more
- 12 Dec 2020
TL;DR: In this paper, the authors presented an SOI-waveguide coupled germanium photodiode with very high OE -3 dB bandwidth of ≥110 GHz at reverse bias of 2 V.
18
Silicon nitride waveguide coupled 67+ GHz Ge photodiode for non-SOI PIC and ePIC platforms
Stefan Lischke,Mirko Fraschke,H.H. Richter,A. Kruger,U. Saarow,P. Heinrich,Georg Winzer,K. Schulz,P. Kulse,A. Trusch,Lars Zimmermann,D. Knoll,Christian Mai,A. Hesse,Galina Georgieva,Anna Peczek,A. Kroh,M. Lisker,D. Schmidt +18 more
- 01 Dec 2019
TL;DR: In this paper, a Ge photodiode, directly coupled to a silicon nitride waveguide, showing more than 67 GHz bandwidth is demonstrated for the first time, which paves the way for new SiN waveguide platform based applications.
12
Influence of Process Parameters on Surface Activated Aluminum-to-Aluminum Wafer Bonding
TL;DR: In this paper , a surface-activated Al-to-Al wafer bonding process for patterned 200mm wafers is presented, which removes the oxide in an argon plasma and enables a high bond quality with an accurate alignment.
4
(Invited) Advancing Si Spin Qubit Research: Process Integration of Hall Bar FETs on Si/SiGe in a 200mm BiCMOS Pilot Line
Felix Reichmann,Alberto Mistroni,Yuji Yamamoto,P. Kulse,Steffen Marschmeyer,Dirk Wolansky,Oksana Fursenko,Marvin Hartwig Zöllner,Giovanni Capellini,Laura K. Diebel,Dominique Bougeard,M. Lisker +11 more
TL;DR: Researchers integrate Hall bar FETs onto Si/SiGe heterostructures in a 200mm BiCMOS pilot line, optimizing SiO2 deposition and contact implantation for low thermal budget gate dielectric, achieving high electron mobility exceeding 300,000 cm²/Vs at 1.5 K.