First-principles studies on electronic transport properties of CdS nanoribbon based molecular device

A comparative study of thin film transistors using rare earth oxides as gates

First-principles calculations to investigate structural, electronic and optical properties of (BeTe) n /(CdS) n superlattices

CdS/Nd2O3 and CdSe/Nd2O3 thin film transistors

Rare-earth oxides Nd2O3, Er2O3, Sm2O3, Pr6O11, and Yb3O2 are found to be suitable for use as the gate insulator in TFTs. Even a 1:1 ratio, by weight, mixed Pr6O11 and Yb2O3 is found to yield good results in CdS and CdSe TFTs. The TFTs having “mixed semiconductor” obtained by mixing CdS and CdSe in the ratio of 1:1 by weight, and the rare-earth oxides as the semiconductor-insulator (S-I) combination also exhibit well saturated characteristics from which transconductance, output resistance, amplification factor, and gain-bandwidth product are calculated.



Es wird gefunden, das Selten-Erd-Oxide Nd2O3, Er2O3, Sm2O3, Pr6O11 und Yb2O2 geeignet sind fur Gate-Isolatoren von TFT. Sogar im Gewichtsverhaltnis 1:1 gemischtes Pr6O11 und Yb2O3 ergibt gute Ergebnisse in CdS- und CdSe-TFT. Die TFT mit einem „Mischhalbleiter”, der durch Mischen von CdS und CdSe im Gewichtsverhaltnis 1:1 hergestellt wird, und die Selten-Erd-Oxide als Halbleiter-Isolator(S-I)-Kombination zeigen gute Sattigungscharakteristiken, aus denen Steilheit, Ausgangswiderstand, Verstarkungsfaktor und Verstarkungsbandbreitenprodukt berechnet werden.

Suitability of Rare-Earth Oxides for Use in Thin Film Transistors

A CdS-Pr6O11 thin film transistor fabricated by a multiple pump-down fabrication procedure is reported in this paper. The transistor characteristics are presented. Various transistor parameters are obtained from the characteristics

A CdS-Pr6O11 thin film transistor

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A CdS-Pr6O11 thin film transistor