We present a comprehensive review of the material properties of cadmium zinc telluride (CZT, Cd1ˇxZnxTe) with zinc content xa 0:1‐0.2. Particular emphasis is placed on those aspects of this material related to room temperature nuclear detectors. A review of the structural properties, charge transport, and contacting issues and how these are related to detector and spectrometer performance is presented. A comprehensive literature survey and bibliography are also included. # 2001 Elsevier Science B.V. All rights reserved.

Cadmium zinc telluride and its use as a nuclear radiation detector material

Among the armoury of photovoltaic materials, thin film heterojunction photovoltaics continue to be a promising candidate for solar energy conversion delivering a vast scope in terms of device design and fabrication. Their production does not require expensive semiconductor substrates and high temperature device processing, which allows reduced cost per unit area while maintaining reasonable efficiency. In this regard, superstrate CdTe/CdS solar cells are extensively investigated because of their suitable bandgap alignments, cost effective methods of production at large scales and stability against proton/electron irradiation. The conversion efficiencies in the range of 6–20% are achieved by structuring the device by varying the absorber/window layer thickness, junction activation/annealing steps, with more suitable front/back contacts, preparation techniques, doping with foreign ions, etc. This review focuses on fundamental and critical aspects like: (a) choice of CdS window layer and CdTe absorber layer; (b) drawbacks associated with the device including environmental problems, optical absorption losses and back contact barriers; (c) structural dynamics at CdS–CdTe interface; (d) influence of junction activation process by CdCl2 or HCF2Cl treatment; (e) interface and grain boundary passivation effects; (f) device degradation due to impurity diffusion and stress; (g) fabrication with suitable front and back contacts; (h) chemical processes occurring at various interfaces; (i) strategies and modifications developed to improve their efficiency. The complexity involved in understanding the multiple aspects of tuning the solar cell efficiency is reviewed in detail by considering the individual contribution from each component of the device. It is expected that this review article will enrich the materials aspects of CdTe/CdS devices for solar energy conversion and stimulate further innovative research interest on this intriguing topic.

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

A summary is presented of the present status of several compound semiconductor radiation detectors, including detectors fabricated from GaAs, HgI2, CdTe, Cd1−xZnxTe and PbI2

Room-temperature compound semiconductor radiation detectors

The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd 1− x Zn x Te as obtained by electron paramagnetic resonance and related techniques is reviewed. Special attention will be paid to the properties of intrinsic defects such as vacancies (V Cd and V Te ) and complexes formed with dopants (A centres: V Cd -donor, and donor-V Cd -donor complexes). In view of the high resistive material required for X- and γ-ray detector applications such defects seem to play an important role.

Defects in CdTe and Cd1−xZnxTe

CdTe can be made semi-insulating by shallow donor doping. This is routinely done to obtain high resistivity in CdTe-based radiation detectors. However, it is widely believed that the high resistivity in CdTe is due to the Fermi level pinning by native deep donors. The model based on shallow donor compensation of native acceptors was dismissed based on the assumption that it is practically impossible to control the shallow donor doping level so precisely that the free carrier density can be brought below the desired value suitable for radiation detection applications. In this paper, we present our calculations on carrier statistics and energetics of shallow donors and native defects in CdTe. Our results show that the shallow donor can be used to reliably obtain high resistivity in CdTe. Since radiation detection applications require both high resistivity and good carrier transport, one should generally use shallow donors and shallow acceptors for carrier compensation and avoid deep centers that are effective carrier traps.

What Causes High Resistivity in CdTe

According to Ramo's theorem the charge collection efficiency of a particle detector is mainly influenced by the field distribution between the contacts of a Schottky diode. In semi-insulating GaAs material a space charge layer is formed due to deep levels needed for the compensation of acceptors. In this paper the deep levels and their influence on the distribution of the electric field is studied experimentally by different methods of electrical characterization. It is found that the electrical active concentration of the midgap donor of ∼10 15 cm −3 at an energy of 0.67 eV below the conduction band is only about one tenth of its total concentration of ∼16 16 cm −3 as measured by infrared absorption. The Schottky barrier leakage current is found to be responsible for the variation of the electrically active deep centers and it therefore influences the charge collection efficiency (c.c.e.). The c.c.e. turns out to be inversely proportional to the active concentration of deep centers. These results are supported by our modelling of the c.c.e.: Using the transport and the Poisson equation the electrical field distribution can be calculated through the coupling of the quasi-Fermi levels and the compensation mechanism. The model calculations of charge collection efficiencies for both alpha particles and protons are confirmed by the experimental results. The work is performed within the framework of the RD8 project.

Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors

Studies of the compensation mechanism in CdTe grown from the vapour phase

Handle everyday research tasks with reliable, citation-backed results

Your personal Research Agent to handle research tasks with citation-backed results

Popular Tasks used by Researchers

How can I help with your research?

Meet SciSpace

Get more enhanced response by uploading the PDFs you want me to reference.

No relevant PDFs in your library

SciSpace is the AI research assistant for academics. Run systematic literature reviews on 280M+ papers, and write papers with cited sources. Trusted by 1M+ students, PhDs & researchers.

SciSpace | AI for Research

Analyze PDFs

Code & Manuscripts

Funding & Grants

Literature & Patents

Medical & Clinical Data

Systematic Review

Visualize & Present

Web & Data

Build a Google Scholar-like website for your research.

Build a website

Create charts and images for your research

Create a Chart

Write a paper for submission to a journal

Draft a manuscript

Patent Search

Design eye-catching scientific posters in minutes.

Scientific Poster Generation

Systematic Literature Review

One task is running at the moment. Your messages will be shown right after.

Drag and drop or click here to browse

Loved by <highlight>1 million+</highlight> researchers

Extract a list of specific topics and their sources from unstructured text

Topics

Compare and analyze relevant papers that matches with your search

Papers

Get insights from PDFs and bookmarked papers from your library

My library

Recent searches

Try searching for:

Catch AI-generated content in scholarly and non-scholarly content

{ai} Detector

Ai Writer

Get PDF Summaries, highlighted text explanations 

Chat with PDF

Effortlessly create in-text citations and bibliographies in APA and 2,500 other formats

Citation generator

Get explanations, summaries, and answers on academic papers

Ease up your research workflow with {scispace}'s cohort of exciting AI tools

Elevate your academic writing skills and convey your ideas the way you want

Paraphraser

Explore our range of reading and writing tools

Your file is being prepared and should be ready in a few minutes. If it's a large file, it might take a bit longer. You can close this window, and we'll email you the file when it's done.

You have reached a maximum limit of <strong>{limit}</strong> columns in the table. Remove at least <strong>1</strong> column to add or create another one.

P. Hug

Author Tools

Chat about Author

Papers

Evaluation of active layer properties and charge collection efficiency of GaAs particle detectors

Studies of the compensation mechanism in CdTe grown from the vapour phase